NAND Memory Quality & Reliability R&D Engineer

Solidigm; San Jose (CA); Hybrid; USD 140,000 - 255,000; Full time

Benefits offered by this job

RSU program

RCU program

Cash bonus

Job summary

Solidigm in California seeks an experienced NAND Quality and Reliability R&D Engineer to design and execute characterization experiments for NAND memory cells and arrays, evaluating performance and reliability, and to develop trims minimizing disturb while optimizing power and speed.

You will collaborate with Device, Design, Reliability, and Product/Test teams, applying device physics, analyzing data, and communicating trade‑offs.

Qualifications

• Bachelor’s in electrical engineering, microelectronics, or closely related field.
• 2+ years of industry experience in semiconductor memory technologies and products.
• Deep understanding of NAND cell and array operations and characterization techniques.
• Strong foundation in semiconductor device physics and process flows.
• Proficiency in statistical analysis methodologies and tools.
• Hands-on programming experience in C, C++, Python, and/or JMP.

Responsibilities

• Design, plan, and execute NAND memory cell and array characterization experiments to evaluate performance and reliability.
• Develop and optimize trims to minimize program and read disturb, affecting product quality.
• Develop and optimize trims to optimize performance and power (tPROGRAM, tREAD, Icc) without harming reliability.
• Apply NAND device physics to explain relationships between data and trim parameters.
• Conduct comprehensive data analysis to identify trade‑offs across multiple parameters.
• Collaborate cross‑functionally to design, test, and improve performance and reliability.

Skills

NAND memory technologies

Statistical analysis

Programming: C/C++/Python

Cross-functional teamwork

Data analysis

Communication

Education

Bachelor's in Electrical Engineering

Master's or PhD in Electrical Engineering or Microelectronics (preferred)

Tools

C

C++

Python

JMP

Job description

Solidigm in California seeks an experienced NAND Quality and Reliability R&D Engineer to design and execute characterization experiments for NAND memory cells and arrays, evaluating performance and reliability, and to develop trims minimizing disturb while optimizing power and speed.

You will collaborate with Device, Design, Reliability, and Product/Test teams, applying device physics, analyzing data, and communicating trade‑offs.