MTS Technology Development Engineer

Silicon Desert Staffing

Bloomington (IN)

Presencial

USD 180 000 - 300 000

Tempo integral

Há 6 dias
Torna-te num dos primeiros candidatos

Recebe uma resposta deste empregador

O teu currículo e carta de apresentação, adaptados exatamente ao que estão a contratar.

Ultrapassa os filtros ATS

Vantagens oferecidas por esta oferta de emprego

competitive salaries
relocation & sign on bonus
annual bonus plan
401(k) match
ample PTO
medical/dental/vision
accident & critical illness insurance
on-site gym
tuition reimbursement
employee recognition programs

Resumo da oferta

Silicon Desert Staffing is seeking a senior technical leader to drive development and optimization of Power Trench MOSFET and BCD technologies. You’ll lead simulations, experiments, and data analysis while mentoring engineers and partnering with design, process, and reliability teams.

You’ll architect process flows, guide test chip success, and present progress to leadership, influencing broad technical directions. Requires MS/PhD and 10+ years in related fields.

Qualificações

  • MS/PhD in EE, Physics, or Materials Science
  • 10+ years relevant experience
  • Deep knowledge of FEOL modules (silicon, epi, diffusion, etch, lithography, thin films)
  • Strong CMOS/BCDMOS or power-device integration experience (IGBTs/MOSFETs)
  • Solid semiconductor device physics foundation
  • Expertise in process-flow design, manufacturability, and meeting electrical targets
  • Skilled in interpreting electrical test data, cross-sections, and FA results
  • Familiar with power-device packaging, assembly, and reliability
  • Experience with backend processes (BGBM, STM) and FMEA development
  • Proficient with DoE tools (JMP, Spotfire) and TCAD simulations

Responsabilidades

  • Lead simulations, hands-on experiments, and deep data analysis to shape reliable, manufacturable devices
  • Mentor junior engineers and partner with design, process, and reliability teams
  • Architect process flows and guide test chip success
  • Present progress to leadership and influence across the organization
  • Interpret electrical test data, FA results, and cross-sections to drive decisions

Conhecimentos

Leadership
Mentoring
Data analysis
Cross-functional communication
DoE tools (JMP, Spotfire)

Formação académica

MS/PhD in EE, Physics, or Materials Science

Ferramentas

TCAD simulations
JMP
Spotfire

Descrição da oferta de emprego

Step into a high‑impact technical leadership role where you’ll drive the development and optimization of cutting‑edge Power Trench MOSFET and BCD technologies. You’ll lead simulations, hands‑on experiments, and deep data analysis that shape reliable, manufacturable devices; all while mentoring junior engineers and partnering closely with design, process, and reliability teams. From architecting process flows to guiding test chip success and presenting progress to leadership, this role puts you at the center of innovation with big technical challenges and real influence across the organization.

MS/PhD in EE, Physics, or Materials Science

10+ years relevant experience

Deep knowledge of FEOL modules (silicon, epi, diffusion, etch, lithography, thin films)

Strong CMOS/BCDMOS or power‑device integration experience (IGBTs/MOSFETs)

Solid semiconductor device physics foundation

Expertise in process‑flow design, manufacturability, and meeting electrical targets

Skilled in interpreting electrical test data, cross‑sections, and FA results

Familiar with power‑device packaging, assembly, and reliability

Experience with backend processes (BGBM, STM) and FMEA development

Proficient with DoE tools (JMP, Spotfire) and TCAD simulations

Strong layout interpretation and cross‑functional communication

  • competitive salaries
  • relocation & sign on bonus
  • annual bonus plan
  • 401(k) match
  • ample PTO
  • medical/dental/vision
  • accident & critical illness insurance
  • on-site gym
  • tuition reimbursement
  • employee recognition programs
Obtém a tua avaliação gratuita e confidencial do currículo.

ou arrasta e larga o ficheiro aqui.

Similar jobs

Ofertas semelhantes que vale a pena comparar

MTS Technology Development Engineer
MTS Technology Development Engineer

Silicon Desert Staffing • BLOOMINGTON (MN)

Presencial
USD 180 000 - 260 000
Relocation assistance
Sign‑on bonus
Annual bonus plan
+7
Principal Technology Development Engineer
Principal Technology Development Engineer

Silicon Desert Staffing • Bloomington (IN)

Presencial
USD 120 000 - 180 000
Competitive salaries
Relocation & sign on bonus
Annual bonus plan
+7
Principal Technology Development Engineer
Principal Technology Development Engineer

Silicon Desert Staffing • BLOOMINGTON (MN)

Presencial
USD 120 000 - 180 000
Competitive salaries
Relocation & sign on bonus
Annual bonus plan
+7
Tech Lead, Power Trench MOSFET & BCD Innovation
Tech Lead, Power Trench MOSFET & BCD Innovation

Silicon Desert Staffing • BLOOMINGTON (MN)

Presencial
USD 180 000 - 260 000
Relocation assistance
Sign‑on bonus
Annual bonus plan
+7
Senior Power MOSFET & BCD Tech Engineer
Senior Power MOSFET & BCD Tech Engineer

Silicon Desert Staffing • Bloomington (IN)

Presencial
USD 180 000 - 300 000
competitive salaries
relocation & sign on bonus
annual bonus plan
+7
MTS Technology Development Engineer
MTS Technology Development Engineer

Polar Semiconductor • BLOOMINGTON (MN)

Presencial
USD 157 000 - 212 000
Health insurance
Dental insurance
Vision insurance
+6
MTS Technology Development Engineer
MTS Technology Development Engineer

Polar Semiconductor, Inc. • BLOOMINGTON (MN)

Presencial
USD 157 000 - 212 000
Health insurance
401(k) plan with company match
Tuition reimbursement
+1
Low-Voltage to Medium-Voltage Silicon MOSFET Design Engineer
Low-Voltage to Medium-Voltage Silicon MOSFET Design Engineer

Onsemi • Scottsdale (AZ)

Presencial
USD 120 000 - 180 000
Technical Lead, New Product Development, SiC & Si Power MOSFETs
Technical Lead, New Product Development, SiC & Si Power MOSFETs

onsemi • Scottsdale (AZ)

Presencial
USD 150 000 - 190 000
Senior Power FET Development Engineer
Senior Power FET Development Engineer

Onsemi • Hopewell Junction (NY)

Presencial
USD 147 000 - 250 000