Lead Power MOSFET Innovation Engineer

onsemi

Hopewell Junction (NY)

Presencial

USD 147.000 - 250.000

Jornada completa

Hace 3 días
Sé de los primeros/as/es en solicitar esta vacante
Generador de candidaturas

Una candidatura completa en un minuto — currículum y carta de presentación adaptados, listos para enviar.

Supera los filtros ATS

Descripción de la vacante

onsemi is seeking a Power Device Engineer at our Hopewell Junction, NY site to join the Power Technology Development team and lead development of next-generation discrete power MOSFET technologies. You will drive device architectures, simulations, and validation, collaborating across process, manufacturing, and product teams.

The role emphasizes data-driven problem solving, leading technical projects, and contributing to technology roadmaps in power MOSFET, Super Junction, SiC, and GaN areas.

Formación

  • BS, MS, or PhD in Electrical Engineering, Physics, Materials Science, or a related field.
  • Experience in developing semiconductor devices with emphasis on Power MOSFETs, Trench MOSFETs, and Super Junction devices.
  • Strong understanding of semiconductor device physics, reliability, and manufacturing processes.
  • Experience moving technologies from development through qualification to volume production.
  • Knowledge of wafer fabrication, wafer probe, electrical characterization, and device testing.
  • Experience with data-driven problem solving and statistical analysis.
  • Ability to independently drive technical projects and influence cross-functional teams.
  • Strong written and verbal communication skills.

Responsabilidades

  • Lead development of next-generation discrete power MOSFET technologies from concept through qualification and production ramp.
  • Define device architectures and electrical performance targets focusing on improving RDS(on), switching efficiency, power density, ruggedness.
  • Drive device simulation, modeling, characterization, and silicon validation activities.
  • Collaborate closely with process integration, manufacturing, product engineering, packaging, reliability, and applications teams to deliver innovative power device solutions.
  • Analyze electrical data, yield trends, and reliability results to identify opportunities for performance improvement.
  • Mentor engineers, provide technical leadership, and help grow the next generation of power semiconductor innovators.

Conocimientos

Power MOSFETs
Trench MOSFETs
Super Junction devices
Other discrete power technologies
Semiconductor device physics
Device reliability
Semiconductor manufacturing processes
Data-driven problem solving

Educación

BS/MS/PhD in Electrical Engineering, Physics, or Materials Science

Herramientas

TCAD
SPICE
Electro-thermal modeling
Compact modeling
Wafer test / WAT
PCM

Descripción del empleo

onsemi is seeking a Power Device Engineer at our Hopewell Junction, NY site to join the Power Technology Development team and lead development of next-generation discrete power MOSFET technologies. You will drive device architectures, simulations, and validation, collaborating across process, manufacturing, and product teams.

The role emphasizes data-driven problem solving, leading technical projects, and contributing to technology roadmaps in power MOSFET, Super Junction, SiC, and GaN areas.

Consigue la evaluación confidencial y gratuita de tu currículum.

o arrastra y suelta tu archivo aquí

Similar jobs

Puestos de trabajo similares que vale la pena comparar

Senior Power FET Development Engineer
Senior Power FET Development Engineer

onsemi • Hopewell Junction (NY)

Presencial
USD 147.000 - 250.000
Lead Power FET Tech – MTS/Sr. MTS Engineer
Lead Power FET Tech – MTS/Sr. MTS Engineer

onsemi • New York (NY)

Presencial
USD 147.000 - 250.000
Power FET Manufacturing Integration Engineer
Power FET Manufacturing Integration Engineer

onsemi • Hopewell Junction (NY)

Presencial
USD 127.800 - 217.200
Competitive benefits package
Manufacturing Integration Engineer
Manufacturing Integration Engineer

onsemi • Hopewell Junction (NY)

Presencial
USD 127.800 - 217.200
Competitive benefits package
MTS/Sr. MTS Engineer – Discrete Power FET Technology Development Hopewell Junction, NY, United [...]
MTS/Sr. MTS Engineer – Discrete Power FET Technology Development Hopewell Junction, NY, United [...]

onsemi • New York (NY)

Presencial
USD 147.000 - 250.000
Manufacturing Integration Engineer Intern - Power Devices
Manufacturing Integration Engineer Intern - Power Devices

ON Semiconductor Corporation • Hopewell Junction (NY)

Presencial
USD 54.000 - 92.000
Competitive compensation
Medical benefits
Flexible work hours
+2
Lead Power MOSFET Design Engineer
Lead Power MOSFET Design Engineer

Renesas Electronics • Austin (TX)

Presencial
USD 150.000 - 210.000
Low-Voltage to Medium-Voltage Silicon MOSFET Design Engineer
Low-Voltage to Medium-Voltage Silicon MOSFET Design Engineer

onsemi • Scottsdale (AZ)

Presencial
USD 120.000 - 180.000
Senior Post Fab Module Engineer (MOSFET)
Senior Post Fab Module Engineer (MOSFET)

ON Semiconductor • Hopewell Junction (NY)

Presencial
USD 120.000 - 180.000
Foundry Power Devices Lead Engineer (SiC/GaN)
Foundry Power Devices Lead Engineer (SiC/GaN)

onsemi • San Jose (CA)

Presencial
USD 140.000 - 190.000