Manufacturing Integration Engineer

onsemi; Hopewell Junction (NY); On-site; USD 127,800 - 217,200; Full time

Benefits offered by this job

Competitive benefits package

Job summary

onsemi is seeking a Manufacturing Integration Engineer at our EFK Hopewell Junction site. In this role, you will lead the technology transfer and manufacturability for discrete power FETs, ensuring device performance through collaboration with cross-functional teams.

The ideal candidate holds a Master's degree and has proven experience in semiconductor manufacturing. The position offers a salary range of $127,800 to $217,200, alongside a competitive benefits package.

Qualifications

• Proven experience in semiconductor manufacturing, specifically with discrete power FETs.
• Experience with wafer-level testing and final testing for discrete power devices.
• Strong understanding of semiconductor physics and fabrication processes.

Responsibilities

• Lead technology transfer and manufacturability for advanced nodes of discrete power FETs.
• Monitor and optimize device performance and collaborate with design teams.
• Drive structured root-cause analysis for yield and reliability issues.

Skills

Semiconductor manufacturing

Device reliability

Data-driven problem-solving

Communication skills

Education

Master’s or Bachelor’s degree in Electrical Engineering, Materials Science, Physics

Tools

DOE

Statistical analysis

SPC

FMEA

Job description

Job Overview

onsemi is seeking a Manufacturing Integration Engineer in our EFK Hopewell Junction site. We are a leading innovator in semiconductor technology, dedicated to advancing power electronics through cutting‑edge research and development. The role is focused on driving technology transfers and manufacturability of next‑generation discrete power FET technologies, providing high technical ownership and cross‑functional visibility.

Responsibilities

• Lead technology transfer and manufacturability for onsemi’s advanced nodes of discrete power FETs, owning device architecture from concept definition through qualification and high‑volume manufacturing.
• Monitor electrical performance and device performance, collaborating with design, process integration, and modeling teams to optimize Rds(on), switching performance, ruggedness, and power density.
• Partner with process module owners in the fab to optimize process windows, ensure device robustness, and resolve integration challenges.
• Perform device characterization, electrical testing, and failure analysis, ensuring compliance with specifications and customer requirements.
• Drive structured root‑cause analysis (DOE, 6‑sigma, SPC, FMEA) for yield, reliability, or device‑related issues, and implement sustainable corrective actions.
• Collaborate with systems engineering, product engineering, packaging, and applications teams to integrate power FETs into system‑level solutions and end‑customer applications.
• Monitor industry trends and emerging device concepts in power MOSFET, superjunction, and wide‑bandgap (SiC/GaN) technologies.
• Generate invention disclosures, patents, and technical reports to strengthen onsemi’s IP portfolio and documentation standards.
• Provide technical guidance, coaching, and mentorship to junior engineers; matrix‑manage engineers across multiple organizations.
• Present technical content in executive‑level reviews and represent the team in cross‑functional and customer‑facing discussions.

Qualifications

• Master’s or Bachelor’s degree in Electrical Engineering, Materials Science, Physics, or a related field.
• Proven experience in semiconductor manufacturing, specifically with discrete power FETs (trench MOSFETs, superjunction, or related structures).
• Experience with post‑wafer fab operations such as Back‑Grind/Back Metallization, Packaging, Dicing and Singulation, module construction.
• Experience with wafer‑level testing, ILT/WAT/PCM, and Probe; familiarity with package‑level final testing especially for discrete power devices.
• Experience taking technologies from development stage, through optimization and qualification, and into volume ramp.
• Strong understanding of semiconductor physics, device reliability, and fabrication processes, including experience in 300mm fabrication.
• Demonstrated ability to translate high‑level objectives into actionable engineering plans and drive projects independently.
• Strong data‑driven problem‑solving skills using DOE, statistical analysis, SPC, 6‑sigma, and FMEA methodologies.
• Track record of leading or significantly contributing to technology development projects with measurable impact on performance, reliability, yield, or cost.
• Excellent communication skills with the ability to present complex technical topics clearly to both engineering and executive audiences.
• Ability to manage multiple projects simultaneously in a fast‑paced development environment.

Salary

Base salary range: $127,800 to $217,200 (exclusive of fringe benefits or potential bonuses). The final pay rate for the successful candidate will depend on geographic location, skills, education, experience, and/or consideration of internal equity of our current team members. We also offer a competitive benefits package.