Hands-on RF Power Amplifier Design Intern

Southern Arkansas University; Lowell (MA); On-site; USD 39,950 - 46,838; Full time

Job summary

A leading semiconductor company seeks an RF Power Amplifier Design Intern to gain hands-on experience in designing and testing RF power devices. This 12-week internship includes individual projects aimed at developing expertise in RF/microwave technology, with responsibilities such as designing impedance matching networks and assembling RF circuits. Ideal candidates are pursuing degrees in Electrical Engineering and have a strong interest in semiconductor devices and documentation skills.

Qualifications

• Working toward a degree in Electrical Engineering.
• Relevant coursework or lab work in RF/microwave and semiconductor devices.
• Willing to work hands-on in the lab.

Responsibilities

• Design RF power devices for high power GaN transistor products.
• Create an impedance matching network for an amplifier.
• Assemble and tune RF circuits.

Skills

Interest in RF/microwave and semiconductor devices

Attention to detail

Strong documentation skills

Education

Bachelor’s or Master’s degree in Electrical Engineering

Tools

RF design software including ADS

RF design software including MWO

AutoCAD

Job description

A leading semiconductor company seeks an RF Power Amplifier Design Intern to gain hands-on experience in designing and testing RF power devices. This 12-week internship includes individual projects aimed at developing expertise in RF/microwave technology, with responsibilities such as designing impedance matching networks and assembling RF circuits. Ideal candidates are pursuing degrees in Electrical Engineering and have a strong interest in semiconductor devices and documentation skills.