Fab Engineering Intern: Device & Process Development

Qorvo, Inc.; Richardson (TX); Presencial; USD 43.000 - 58.000; Jornada completa

Ventajas ofrecidas por este puesto de trabajo

Challenging assignments

Mentoring and coaching

Launch & Learns

Collaborative team-based work

Networking and social events

Final presentation to leaders

Descripción de la vacante

Qorvo, Inc. seeks a Device and Process Development Intern in Richardson, TX to support advanced wafer-level processes in high performance analog. You will assist in fabrication, data analysis, and process optimization under mentorship.

The internship offers hands-on lab experience, exposure to photolithography, etch, and plating areas, plus training in JMP/Spotfire and Excel, with opportunities to present findings to leaders.

Formación

• Currently pursuing a MS, PhD (PhD preferred) in Electrical Engineering, Chemical Engineering, Chemistry, Materials Science, or related fields.

Responsabilidades

• Hands-on operation of semiconductor fabrication equipment to develop sophisticated wafer-level processes.
• Process troubleshooting and recipe optimization, preferably in photolithography area.
• Experimental design and execution of a fab engineering trial.
• Projects involving Photo lithography, Electroplating, plasma etch, and Dry/Wet Etch.
• Data analysis using software such as JMP, Spotfire, or Excel.

Conocimientos

Self-starter

Problem-solving

Communication skills

Attention to detail

Organizational skills

Educación

MS or PhD in Electrical Engineering or related field

Herramientas

Microsoft Office

Descripción del empleo

Qorvo, Inc. seeks a Device and Process Development Intern in Richardson, TX to support advanced wafer-level processes in high performance analog. You will assist in fabrication, data analysis, and process optimization under mentorship.

The internship offers hands-on lab experience, exposure to photolithography, etch, and plating areas, plus training in JMP/Spotfire and Excel, with opportunities to present findings to leaders.