DRAM Architect - Sr Engineer

1000 Micron Technology, Inc.

Boise (ID)

On-site

USD 100,000 - 130,000

Full time

14 days+

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Benefits offered by this job

Choice of medical, dental, and vision plans
Paid family leave
Robust paid time-off program

Job summary

1000 Micron Technology, Inc. is seeking a DRAM Architect in Boise, Idaho, to optimize DRAM solutions for power, performance, and cost. In this role, you will develop comprehensive solutions and collaborate with multi-functional teams to drive innovation in memory technology.

The ideal candidate should have over 3 years of experience in memory design and hold a Bachelor's degree in Electrical Engineering or related field. Excellent problem-solving and communication skills are essential.

Qualifications

  • 3+ years of experience in memory design, product engineering, or system architecture.
  • Self-motivated with exceptional problem-solving skills.
  • Excellent communication and interpersonal skills.

Responsibilities

  • Develop comprehensive DRAM system/component solutions.
  • Collaborate with multi-functional teams for innovative solutions.
  • Analyze system behavior for performance optimizations.

Skills

Memory design
Problem-solving
Communication

Education

Bachelor's degree in Electrical Engineering or related field

Tools

Memory system modeling tools

Job description

Job Summary

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a DRAM Architect, you will optimize DRAM solutions for power, performance, and cost while pioneering new memory features and system-level innovations. You will collaborate with global, multi‑functional teams to deliver high-quality, reliable, and power‑efficient DRAM solutions that meet aggressive performance and time‑to‑market goals.

Responsibilities
  • Develop comprehensive DRAM system/component solutions, specifications, and methodologies to optimize DRAM performance, power efficiency, and cost.
  • Collaborate with multi‑functional teams to brainstorm and implement innovative ideas, assess solution efficiency, and make necessary adjustments.
  • Drive innovation in future memory generations within a dynamic work environment.
  • Analyze system behavior and assess solution effectiveness, making data‑driven optimizations and trade‑offs.
  • Communicate complex technical concepts to engineers from various backgrounds.
Minimum Qualifications
  • 3+ years of proven experience in memory design, product engineering, or system architecture and usage.
  • Self‑motivated with exceptional problem‑solving skills and a drive to discover new solutions.
  • Excellent communication and interpersonal skills.
  • Bachelor’s degree or equivalent experience in Electrical Engineering, Computer Engineering, or a related field.
Preferred Qualifications
  • Experience with LPDDR5/6, DDR5/6, GDDR6/7.
  • Ability to identify and analyze complex organizational problems and develop innovative solutions.
  • Experience with memory system modeling, performance simulation, or architectural trade‑off analysis.
  • Familiarity with JEDEC standards, DRAM specifications, and cross‑layer (system‑to‑silicon) optimization.
Benefits
  • Choice of medical, dental and vision plans in all locations enabling team members to select the plans that best meet their family healthcare needs and budget.
  • Benefit programs that help protect income if unable to work due to illness or injury, and paid family leave.
  • Robust paid time‑off program and paid holidays.
Equal Employment Opportunity

Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.

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