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Micron Technology, Inc is seeking a Design Engineer to analyze and optimize advanced memory technologies at their Boise, Idaho location. The role involves evaluating DDR memory systems and delivering actionable design guidance through collaboration with architecture and product teams.
The ideal candidate will hold a Bachelor’s or Master’s degree in Electrical Engineering or a related field, and possess strong analytical and communication skills. This position offers a competitive salary and comprehensive benefits.
Req ID: JR104310 DMTS Design Engineer
Our vision is to transform how the world uses information to enrich life for all.
Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.
DRAM Engineering (DRAM Memory) focuses on designing and developing Micron’s industry‑leading dynamic random‑access memory products. The team drives process R&D, product design, and technology development for cutting‑edge DRAM nodes, including DDR5, LPDDR, HBM, and GDDR products that form the foundation of Micron’s global revenue leadership. We work across architecture, engineering, and business teams to evaluate innovative memory solutions and influence product direction.
Relocation Level: TBD
US base salary range: $208,000.00 – $416,000.00 per year. Additional compensation may include benefits, bonuses, and equity.
Benefits include medical, dental, and vision plans, disability insurance, paid family leave, robust paid time‑off, and paid holidays.
Micron is proud to be an equal‑opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.