Atomistic Modeling of Defects in Semiconductor Devices

National Institute of Standards and Technology; Gaithersburg (MD); On-site; USD 82,000 - 87,000; Full time

Job summary

The National Institute of Standards and Technology (NIST) invites qualified individuals to join the Materials Measurement Laboratory as an associate researcher. Focus areas include developing multi-scale modeling infrastructure to predict properties and performance of advanced semiconductor materials and devices, integrating first principles methods with TCAD-like simulations.

Experience with VASP, TCAD, and COMSOL is required, along with Python programming.

Qualifications

• Ph.D. in Materials Science and Engineering or a related field.
• Experience with using VASP, TCAD and COMSOL to perform multi-scale simulations.
• Python programming experience.
• Excellent written and oral communication skills are required.

Responsibilities

• Perform example TCAD/COMSOL simulations for benchmarking.
• Compare TCAD/COMSOL and non-equilibrium Green's function (NEGF) for predicting transport properties of semiconductor interfaces.
• Evaluate various tight-binding models which are necessary for NEGF models.
• Develop machine learning models for multi-physics data.
• Presenting results at internal meetings, and occasional meetings with external stakeholders.

Education

Ph.D. in Materials Science and Engineering or related field

Tools

VASP

TCAD

COMSOL

Python

Job description

Atomistic Modeling of Defects in Semiconductor Devices

The Material Measurement Laboratory of the National Institute of Standards and Technology (NIST) is seeking qualified persons (U.S. citizens preferred) to develop a multi-scale modeling infrastructure for the predicting the properties and performance of advanced semiconductor materials and devices. This position will focus on integrating first principles methods with device level models, such as Technology Computer Aided Design (TCAD) simulations. Of particular interest is developing models to better predict the interface properties for semiconductor heterostructures. Some of the materials of interest for interface design include Si, GaN, AlN, Al2O3, HfO2, Al, and Cu.

Duties

• Perform example TCAD/COMSOL simulations for benchmarking.
• Compare TCAD/COMSOL and non-equilibrium Green's function (NEGF) for predicting transport properties of semiconductor interfaces.
• Evaluate various tight-binding models which are necessary for NEGF models.
• Develop machine learning models for multi-physics data.
• Presenting results at internal meetings, and occasional meetings with external stakeholders.

Required Skills, Expertise, and Qualifications

• Ph.D. in Materials Science and Engineering or a related field.
• Experience with using VASP, TCAD and COMSOL to perform multi-scale simulations.
• Python programming experience.
• Excellent written and oral communication skills are required.

Employment Terms

This opportunity is to be an associate researcher in the NIST Materials Science and Engineering Division for a term of 1 year, with options to renew. Associate researchers are NOT Federal Employees, but they work along with NIST researchers and with NIST's often world class instrumentation. Relocation expenses will not be provided. U.S. citizens hired into associate positions may have the opportunity to seek longer term Federal Employment.

An Associate at NIST is not a federal employee but collaborates with NIST on research projects of mutual interest and does not work exclusively on NIST mission-related activities. If you have any questions, please contact the International and Academic Affairs Office at [e-mail] .

Between $82,000 and $87,000, based on qualifications and experience.