Senior / Staff Engineer - GaN Epitaxy

Infineon Technologies AG; Singapore; On-site; SGD 70,000 - 90,000; Full time

Job summary

A leading semiconductor solutions provider in Singapore is seeking a GaN Epitaxy Engineer to develop and optimize MOCVD epitaxy processes for advanced power switching applications. The ideal candidate will have a Ph.D. in Material Science or equivalent experience with significant hands-on experience in MOCVD tools. This role involves collaboration with cross-functional teams and driving innovation in energy-efficient solutions.

Qualifications

• Ph.D in Material Science or equivalent experience is required.
• Hands-on experience with MOCVD tools is critical.
• Metrology and material characterization experience is required.

Responsibilities

• Develop and optimize GaN on Si & GaN on Sapphire MOCVD epitaxy processes.
• Design GaN epitaxial layer stacks and growth recipes.
• Troubleshoot issues in material growth processes.

Skills

MOCVD tools operation

Metrology techniques

Data analysis

Communication skills

Education

Ph.D in Material Science

Masters in Material Science/Chemistry/Solid State Physics

Undergraduate with 5+ years experience

Tools

AFM

TEM

XRD

PL

Ellipsometry

FTIR

Job description

Overview

Are you passionate about pushing the boundaries of GaN technology? We’re looking for a GaN Epitaxy Engineer to take the lead in developing and optimizing GaN-on-Si and GaN-on-Sapphire MOCVD epitaxy processes that power the next generation of energy-efficient devices. In this role, you’ll design advanced GaN epitaxial layer stacks and tailor growth recipes that directly impact device performance and innovation in power switching applications.

Responsibilities

• Development and optimisation of GaN on Si & GaN on Sapphire MOCVD epitaxy processes for power switching applications
• Design GaN epitaxial layer stacks and growth recipes based on device requirements and performance targets
• Develop and implement new epitaxial processes for advanced wafer products
• Troubleshoot and resolve issues that arise during material growth to ensure high-quality epitaxial layers
• Work closely with device engineers to develop next-generation technologies

Your Profile / Qualifications

• Ph.D in Material Science (or) Masters in Material Science / Chemistry/ Solid State Physics with 3+ years of Industry experience (or) Undergraduate degree with 5+ years of Industry experience with focus onIII-V Hetero-epitaxy MOCVD
• Hands-on experience in operating MOCVD tools (Aixtron / Veeco /others) for AlGaN/GaN HEMT systems on Silicon and Sapphire Substrates (critical requirement)
• Experience in Metrology and material characterisation techniques and tools (for e.g. AFM/TEM/XRD/PL/Ellipsometry/FTIR) (critical requirement)
• Experience in III-V device processing tools and processes (for e.g. RIE/ Wet etch / Passivation) (is a plus)
• Understanding of basic device concepts pertaining to AlGaN/GaN HEMTs for power switching applications (is a plus)
• Expertise in data organisation / data analysis
• Good communication skills and ability to work with cross-functional teams in a global R&D organization

About the Company & Inclusion

We are driving decarbonization and digitalization. As a global leader in semiconductor solutions for power systems and IoT, Infineon enables game-changing solutions for green and efficient energy, clean and safe mobility, and smart and secure IoT. We drive innovation and customer success, while caring for our people and empowering them to reach ambitious goals. We embrace diversity and inclusion and welcome everyone for who they are. At Infineon, we offer a working environment characterized by trust, openness, respect and tolerance and are committed to give all applicants and employees equal opportunities. We base our recruiting decisions on the applicant’s experience and skills. Learn more about our various contact channels. Please let your recruiter know if they need to pay special attention to something in order to enable your participation in the interview process. Click here for more information about Diversity & Inclusion at Infineon.