Senior NAND Cell Reliability Engineer — Next‑Gen Memory

Micron

Singapore

On-site

SGD 120,000 - 180,000

Full time

14 days+

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Job summary

Micron Technology, Inc. in Singapore seeks a high-energy Reliability Engineer focused on NAND cell reliability. You will perform electrical characterization, design high-volume experiments, and address failure mechanisms to improve reliability while minimizing impact on performance and yield.

You will join a cross-functional team, work on AI-assisted tools, and contribute to next-generation NAND technology development with a strong emphasis on data-driven analysis and process optimization.

Qualifications

PhD/Masters in Electrical/Electronics/Microelectronics/Materials Science/Engineering or equivalent experience.
Proven experience with NAND device structures, operations and algorithms.
Knowledge of electrical properties of semiconductor materials and device physics.
In-depth understanding of physics-based modeling of non-volatile memory and failure mechanisms.
Knowledge of statistical analysis and numerical computing software (Matlab, Octave, JMP).
Knowledge of scripting languages (C, C++, Matlab, Perl).
Familiar with Big Data and database queries.
Knowledge of JEDEC standards.

Responsibilities

Risk assessment of NAND cell reliability, identification of strategy to bridge gaps for JEDEC and internal qualification.
Design experiments to identify and segment reliability mechanisms impacting NAND quality.
Design high-volume electrical experiments (wafer and component level) and analyze data to validate solutions.
Update management and provide feedback to process development and product engineers on reliability status and roadmap.
Contribute to forward-looking technology paths including reliability risk assessment and product capability projections.