NAND Cell Reliability Engineer – Shape Next‑Gen Memory

Micron Memory Malaysia Sdn Bhd; Singapore; On-site; SGD 120,000 - 180,000; Full time

Job summary

Micron Technology, Inc. is seeking a Reliability Engineer to advance NAND cell reliability through electrical characterization and high-volume experiments.

You will work on identifying failure mechanisms and improving cell quality within project timelines, collaborating with process development and product engineers. The role involves risk assessment, designing experiments, and contributing to forward-looking technology paths for next-generation NAND with a focus on quality and performance.

Qualifications

• Bachelors/Masters/PhD in Electrical/Electronics/Microelectronics/Materials Science/Engineering or equivalent experience.
• Experience with NAND device structures, operations and algorithms.
• Strong understanding of semiconductor physics and reliability analysis.

Responsibilities

• Perform electrical characterization of NAND cell array and test structures to identify reliability issues.
• Design high-volume electrical experiments to improve cell reliability with minimal impact on performance and yield.
• Collaborate with cross-functional teams to address failure mechanisms and risks.

Skills

NAND devices

Electrical properties

Device physics

Statistical analysis

Matlab/Octave

C/C++ scripting

Big Data queries

JEDEC standards

Education

PhD/Masters Degree in Electrical/Electronics/Microelectronics/ Materials Sci/Engineering

Job description

Micron Technology, Inc. is seeking a Reliability Engineer to advance NAND cell reliability through electrical characterization and high-volume experiments.

You will work on identifying failure mechanisms and improving cell quality within project timelines, collaborating with process development and product engineers. The role involves risk assessment, designing experiments, and contributing to forward-looking technology paths for next-generation NAND with a focus on quality and performance.