Senior FBAR Engineer (Electronics / MEMS)

talent trader group pte. ltd.; Singapore; On-site; SGD 120,000 - 180,000; Full time

Job summary

talent trader group pte. ltd. seeks a seasoned FBAR engineer in Singapore to drive design, simulation, and experimental validation from concept to prototyping. You will optimize Q-factors, collaborate with MEMSFoundries, and benchmark against market leaders to shape IP strategy.

The role requires a Master’s/PhD in a related field and at least 3 years of hands-on FBAR experience, with strong AlN/ScAlN knowledge, COMSOL skills, and RF metrology. Travel to China up to 50% is expected.

Qualifications

• Master’s or PhD in Microelectronics, Materials Science, Applied Physics, MEMS Engineering, or related field.
• Minimum 3 years hands-on FBAR resonator development experience, ideally with volume production.
• Deep knowledge of FBAR physics, Q-factor mechanics, architectures, and AlN/ScAlN thin films.
• Proficiency in simulation tools (COMSOL), RF characterization equipment, and MEMS fabrication techniques.
• Willingness to travel to China up to 50% per month.
• Patents or publications in FBAR are advantageous.

Responsibilities

• Analyze Q-limiting mechanisms and optimize FBAR layers to minimize acoustic loss.
• Lead FBAR resonator design, simulation, and experimental validation from concept through prototyping.
• Collaborate with process engineers and MEMS foundries to establish manufacturing flows and process windows.
• Benchmark against leading FBAR products to drive differentiated design and IP strategy.
• Establish standardized Q-factor characterization methods and analyze process variations on device performance.

Skills

FBAR design

MEMS simulation

COMSOL

RF characterization

China travel (50%)

Education

Master’s or PhD in Microelectronics/Materials Science/Applied Physics/MEMS Engineering

Tools

COMSOL Multiphysics

RF measurement equipment

MEMS fabrication techniques

Job description

Responsibilities

• Analyze Q-limiting mechanisms and execute structural, material, and geometry optimizations across FBAR layers to minimize acoustic loss.
• Lead FBAR resonator design, simulation, and experimental validation from concept through prototyping.
• Collaborate with internal process engineers and external MEMS foundries to establish robust manufacturing flows and process windows.
• Conduct competitive benchmarking against leading FBAR products to drive differentiated design approaches and IP patent strategy.
• Establish standardized Q-factor characterization methodologies and analyze the impact of process variations on device performance.

Requirements

• Master’s or PhD in Microelectronics, Materials Science, Applied Physics, MEMS Engineering, or a related field.
• Minimum 3 years of hands-on experience in FBAR resonator development, ideally with experience taking designs into volume production.
• Deep knowledge of FBAR physics, Q-factor mechanics, mainstream architectures, and AlN/ScAlN piezoelectric thin films.
• Proficiency in simulation tools (such as COMSOL), RF characterization equipment, and MEMS fabrication techniques.
• Ability and willingness to travel to China up to 50% per month.
• Proven track record in leading Q-factor improvement projects, holding patents, or publishing technical research is an advantage.

EA License No: 13C6305

Reg. No.: R1985234 (GOH HOOI MING)

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