Scientist (Power Electronics), IME

A*STAR - Agency for Science, Technology and Research; Singapore; On-site; SGD 120,000 - 180,000; Full time

Job summary

A*STAR – Agency for Science, Technology and Research in Singapore seeks a PhD-level specialist to develop and optimize SiC MOSFET process integration. You will collaborate with cross-functional teams to design and implement robust process modules for high-yield manufacturing.

The role requires 2–3 years in Si technology or related semiconductor manufacturing, strong knowledge of unit processes, and the ability to work both in a team and independently. Prior R&D exposure is a plus.

Qualifications

• Ph.D degree in Electronics Engineering or related field.
• 2–3 years experience in Si technology or power device process integration.
• Knowledge of semiconductor unit processes such as lithography, etch, thin film, implant, PVD.
• Ability to work effectively in a team as well as independently.
• Intern/working experience in semiconductor manufacturing/R&D is a plus.

Responsibilities

• Develop and optimize process flows for SiC MOSFET fabrication.
• Collaborate with cross-functional teams to design and implement process modules for SiC MOSFETs manufacturing.
• Conduct process characterization and optimization to ensure device performance, yield and reliability.
• Drive innovation by exploring and implementing advanced process technologies for SiC MOSFETs.
• Engage with diverse stakeholders to analyze & debug devices’ test related issues.

Skills

Communication skills

Team collaboration

Independent work

Education

Ph.D in Electronics Engineering

Ph.D in Materials Science

Ph.D in Physics

Tools

Lithography

Etch

Thin Film

Implant

PVD

Job description

Job Description

Job Responsibilities

• Develop and optimize process flows for SiC MOSFETs fabrication, focusing on process integration and yield improvement.
• Collaborate with cross-functional teams to design and implement process modules for SiC MOSFETs manufacturing.
• Conduct process characterization and optimization to ensure device performance, yield and reliability.
• Drive innovation by exploring and implementing advanced process technologies for SiC MOSFETs
• The candidate will engage with diverse stake-holders (e.g. characterization, and circuit design engineers) to analyze & debug devices’ test related issues.

Job Requirements

• Ph.D degree in Electronics Engineering, Materials Science, Physics or related field.
• Proven experience (2-3 years) in Si technology or power related device process integration, semiconductor manufacturing, or related areas.
• Knowledge of semiconductor unit processes such as lithography, etch, thin film, implant, PVD etc.
• Ability to work effectively as a team as well as independently.
• Intern/working experience in semiconductor manufacturing/R&D will be considered a plus.
• Excellent communication skills and the ability to collaborate effectively within multidisciplinary teams.