Research Fellow (Power Electronics)

National University of Singapore; Singapore; On-site; SGD 100,000 - 151,000; Full time

Job summary

National University of Singapore seeks a researcher to advance SiC power devices and high-frequency circuit concepts in a collaborative lab environment. You will model, simulate, and benchmark devices while supporting lab operations and mentoring students.

The role emphasizes leadership in projects, hands-on hardware testing, and collaboration with the PI and industrial partners where applicable.

Qualifications

• PhD required in Electrical Engineering with a focus on power engineering.
• Experience in power electronics, high-frequency gate driver design, EMI filter, loss analysis.
• Strong knowledge of wide band gap semiconductors and device concepts.

Responsibilities

• Lead the research project with the PI and team on SiC power devices.
• Model, evaluate, and benchmark SiC devices and power electronics.
• Coordinate lab management, procurement, and vendor liaison.
• Mentor students; senior roles may include project management duties.

Skills

Power electronics

Gate driver design

EMI filter

Device modelling

PSIM/PLECS

MATLAB/Simulink

Education

PhD in Electrical Engineering (Power)

Tools

PSIM

PLECS

MATLAB/Simulink

Job description

Job Description

Manage the research project with Principal Investigator (PI) and the research team members to study, evaluate, propose and innovate on the following:(1) High-switching frequency high temperature operation of Wide Band Gap (WBG) SiC Semiconductor devices and applications.(2) Establish foundational work in the modelling, design, performance evaluation, and benchmarking of SiC power devices and power electronics.(3) Characterization of new semiconductor devices(4) Electrical Circuit Modelling of SiC devices at high switching frequency and high temperature.(5) Thermal modelling and advanced cooling at high temperature of SiC devices.(6) Simulation model of new SiC devices(7) Loss modelling and analysis(8) EMI filter design(9) Gate driver design (high frequency and WBG parasitic)(10) Benchmarking for specific applications and demonstrate features of cost, density, and weightCarry out Risk Assessment, and ensure compliance with Work, Safety and Health Regulations.
• Work independently, as well as within a team, to ensure proper operation and maintenance of equipment and assist in laboratory management.
• Coordinate procurement and liaison with vendors/suppliers.
• Mentor students involved in the research project
• For those hired at senior levels, management responsibilities may be included

Qualifications

• Have a PhD degree in Electrical Engineering or equivalent from a recognized University with major in Power Engineering
• Relevant experience in power electronics, high frequency gate driver circuit design, EMI filter, loss analysis, switching strategies, and closed loop control system
• Strong knowledge of power electronics, drives, and WBG semiconductor devices is highly preferred. Experience with hardware testing and real-time simulation will be advantageous.
• Knowledge and hands-on experience in Wide band gap semiconductors, device parasitic, device simulation, gare driver design for WBG devices, EMI filter design, high-switching frequency operation, thermal management, high power prototype design and testing, etc. are preferred.
• Knowledge of software such as PSIM, PLECS and MATLAB/Simulink
• Prior knowledge and experience in digital twins/HIL will be a bonus
• Prior knowledge and experience of AI/ML and automation in power electronics and power system will be useful
• Experienced and committed to participating in project meetings.
• Self-motivated team player and good project management skills.
• Excellent communication and interpersonal skills.
• Open to Fixed Term Contract