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Applied Angstrom Technology Pte. Ltd. (AAT) is a Singapore-based startup focused on atomic layer etch technologies for 3D device manufacturing.
As Principal Process Engineer, you will lead R&D, define process roadmaps, and mentor staff while collaborating with software and hardware teams. You will drive strategy for ALE isotropic/anisotropic etching, partner on real-time process control, qualify prototypes, and translate customer roadmaps into concrete specifications.
Applied Angstrom TechnologyPte.Ltd. ("AAT") is a start-up semiconductor equipment company with our headquarter in Singapore. AAT has the mission to be the world-class process technology provider in the Angstrom era for 3D device manufacturing and to build an ecosystem in equipment design, manufacturing, and component/material supply chain in US and Singapore.
As a Principal Process Engineer at AAT, you willoperateoncutting-edgetechnology at the atomic scale, serving as a technical authority and strategic owner for AAT’s next-generation atomic layer etch technologies. You will bridge plasma physics, material science, and chamber hardware design to define the process roadmaps that enable Angstrom-era device. In this high-impact principal role, you will lead complex R&D initiatives, architect breakthrough etch formulations, co-optimize hardware-process parameters with engineering teams. You will also mentor senior engineers and scientists, drive patent generation, and influence AAT’s AI-native process control algorithms.
Job Description:
The ideal candidate shall be able to perform the following:
Drive the technical strategy and process architecture for novel Atomic Layer Etching (ALE)isotropic/anisotropic surface modification, and surface passivation chemistries targeting GAA nanosheet release, high-aspect-ratio (HAR) contact etch, and nanoscale selectivity.
Lead fundamental studies in plasma-surface interactions, surface chemistry kinetics, radical/ion flux tuning, and atomic self-limiting mechanisms.
Partner cross-functionally with software and AI control teams to integrate recipe optimization, real-time end-point detection, and predictive process drift control.
Collaborate with mechanical, electrical, RF/plasma, and software control engineers to specify chamber geometry, gas distribution, RF plasma source coupling, and thermal management for next-generation tools.
Lead process qualification of prototype tools from early cleanroom alpha/beta to customer demonstration and pilot-line release.
Translate customer device roadmaps and yield challenges into concrete process specifications, benchmark demos, and technical proposals.
Identifybreakthrough surface reaction concepts and novel chamber designs; lead patent disclosures to secure AAT's intellectual property leadership.
Mentor, coach, and guide staff/senior process engineers, scientists, and lab technicians, cultivating an environment of technical rigor and rapid execution.
Job Qualifications:
Ph.D. orMaster’sdegree in Materials Science, Chemical Engineering, Chemistry, Physics, or a related engineering discipline.
8+ years (for Ph.D.) or 12+ years (for Master's) of hands-on semiconductor process R&D experience in advanced etch (plasma etch, reactive ion etch, atomic layer etch).
Proventrack recordof taking novel semiconductor process formulations from R&D concept to high-volume manufacturing (HVM) or successful customer pilot lines.
Deepexpertisein plasma etch physics and chemistry, self-limiting atomic layer reactions, surface characterization, and plasma diagnostics (OES, mass spectrometry, Langmuir probes).
Mastery of Design of Experiments (DOE), Statistical Process Control (SPC), statistical analysis tools (JMP, Minitab, MATLAB), and physical-chemicalmodelingof etch kinetics.
Highly competent in surface analysis and material characterization techniques (e.g., SEM, TEM, XPS, AFM, ellipsometry, SIMS, profilometry).
Entrepreneurial mindset: thrives in a fast-paced, low-bureaucracy startup environment where ideas turn into working hardware in days, not quarters.
Portfolio of industry patents or peer-reviewed publications in plasma processing and thin-film material science is highly preferred.