Reliability Engineer, VIE – Italy (HTOL/HTRB tests)

STMicroelectronics; Catania; On-site; EUR 42,000 - 66,000; Full time

Job summary

STMicroelectronics in Catania, Sicily, joins the Quality and Reliability department to conduct reliability trials essential for product qualification. You will perform silicon and package stress tests and draw biasing circuits for stress stages, then debug HW prior to reliability execution.

A deep understanding of transistor physics and failure mechanisms is required to diagnose issues and improve device robustness and long-term performance.

Qualifications

• Master's degree required in Electronic Engineering or Physics.
• Knowledge of reliability/semiconductor physics and electrical characterization.
• Experience with reliability test programs and defined test plans.
• Hands-on transistor reliability characterization and stress testing.
• Proficient with reliability equipment and instrumentation.
• Data analysis and detailed technical reporting.
• Familiar with industry reliability standards and qualification procedures.
• Good written and spoken English.
• Programming and numerical modeling skills are a plus.
• Problem solving and teamwork attitude.

Responsibilities

• Conduct reliability trials for product qualification.
• Perform HTOL, HTRB, THB and other stress tests.
• Design biasing circuits for stress tests.
• Debug hardware before reliability execution.
• Analyze data and contribute to technical reports.
• Collaborate with cross-functional teams to ensure device robustness.

Skills

Reliability testing knowledge

Data analysis

Problem solving

Teamwork

English proficiency

Education

Master's degree in Electronic Engineering or Physics

Job description

STMicroelectronics in Catania, Sicily, joins the Quality and Reliability department to conduct reliability trials essential for product qualification. You will perform silicon and package stress tests and draw biasing circuits for stress stages, then debug HW prior to reliability execution.

A deep understanding of transistor physics and failure mechanisms is required to diagnose issues and improve device robustness and long-term performance.