Postdoc: Electronic Doping in Metal Halide Semiconductors

IIT; Milano; On-site; EUR 45,000 - 47,000; Full time

Benefits offered by this job

Private health care

Tax relief for eligible applicants

Job summary

IIT in Milano, Italy, seeks a Postdoctoral Fellow to characterize electronic doping in metal halide semiconductors within the ERC Advanced Grant project EDO. You will join the Advanced Materials for Optoelectronic research unit and work on protocols for spatially controlled, stable doping in soft semiconductors.

The role emphasizes electrical characterization of doped materials and devices, collaboration across disciplines, and contribution to a high-impact research program funded by ERC.

Qualifications

• A PhD in Physics, Electronic engineering, Material Science and similar disciplines
• Documented experience in the study of charge transport and structure-property correlation in soft semiconductors
• Documented experience in the electrical/electronic characterization of metal halide perovskites and their devices
• Good command in spoken and written English

Responsibilities

• Electronic characterization of doped metal halide semiconductors and devices in a multi-disciplinary team

Skills

English proficiency

Autonomous work

Collaborative mindset

Analytical reasoning

Growth mindset

Education

PhD in Physics

PhD in Electronic Engineering

PhD in Material Science

Job description

IIT in Milano, Italy, seeks a Postdoctoral Fellow to characterize electronic doping in metal halide semiconductors within the ERC Advanced Grant project EDO. You will join the Advanced Materials for Optoelectronic research unit and work on protocols for spatially controlled, stable doping in soft semiconductors.

The role emphasizes electrical characterization of doped materials and devices, collaboration across disciplines, and contribution to a high-impact research program funded by ERC.