Senior Engineer - SiC Technologist

Navitas Semiconductor; Maharashtra; On-site; INR 1,800,000 - 3,200,000; Full time

Job summary

Navitas Semiconductor's India Center of Excellence seeks a Senior Engineer – SiC Technologist to advance GeneSiC silicon carbide power technologies, including MOSFETs, diodes, and modules for high‑voltage, high‑efficiency applications across data centers, energy systems, and EV charging.

You will collaborate across global teams, design experiments, analyze data, and contribute to qualification and reliability programs, while mentoring colleagues and building SiC capability.

Qualifications

• Bachelor’s or Master’s degree in Electrical/Electronics or related field.
• 4–8 years of semiconductor device engineering experience.
• Strong understanding of SiC power device physics (MOSFETs, diodes, high-voltage operation).
• Hands-on experience with characterization equipment such as curve tracers, high‑voltage SMUs, parametric analyzers, oscilloscopes, double‑pulse testers, thermal chambers, probe stations, or reliability stress systems.
• Experience with reliability mechanisms in wide‑bandgap devices.
• Ability to interpret data, identify trends, and propose corrective actions.
• Excellent written and verbal communication; cross‑functional collaboration.

Responsibilities

• Support SiC technology development across device design, process integration, characterization, reliability, and qualification.
• Develop and execute electrical characterization plans for SiC devices.
• Analyze wafer, package, and application data to identify trends, yield limiters, and reliability risks.
• Collaborate with global teams to drive technology improvements.
• Support accelerated reliability testing and robustness assessments.
• Perform root-cause analysis using electrical data and process history.
• Contribute to DOE planning, analysis, and tech transfer activities.
• Develop automated data analysis workflows and dashboards.
• Prepare technical reports and engineering recommendations for stakeholders.
• Mentor junior engineers and build SiC expertise in the India center.

Skills

Strong comms

Data-driven

Statistical analysis

Cross-functional

Ownership mindset

Problem solving

Education

Bachelor’s or Master’s in Electrical/Electronics/Materials Science/Physics

Master’s or PhD in power semiconductors/SiC

Tools

Curve tracers

High-voltage SMUs

Parametric analyzers

Oscilloscopes

Double-pulse testers

Thermal chambers

Probe stations

Reliability stress systems

Job description

Navitas Semiconductor is seeking a highly motivated Senior Engineer – SiC Technologist to join the India Center of Excellence and support the development, characterization, qualification, and continuous improvement of GeneSiC™ silicon carbide power semiconductor technologies. This role will contribute to next-generation SiC device platforms, including MOSFETs, diodes, known-good-die, discretes, and power module technologies for high-voltage, high-efficiency applications across AI data centers, energy and grid infrastructure, industrial electrification, renewable energy, EV charging, and high-performance power conversion markets.

Key Responsibilities

• Support SiC technology development activities across device design, process integration, characterization, reliability, and product qualification.
• Develop and execute electrical characterization plans for SiC power devices, including breakdown voltage, leakage, threshold voltage, on-resistance, transfer/output characteristics, capacitance, gate charge, switching losses, avalanche robustness, and short-circuit behavior.
• Analyze wafer-level, package-level, and application-level data to identify performance trends, process sensitivities, yield limiters, and reliability risks.
• Collaborate with global device engineering, process integration, product engineering, packaging, test, reliability, quality, and applications teams to drive technology improvements.
• Support accelerated reliability testing and robustness assessments such as HTRB, HTGB, H3TRB/THB, temperature cycling, power cycling, TDDB, HTOL, dynamic stress testing, avalanche/UIS, and short-circuit ruggedness.
• Perform root-cause analysis for device performance or reliability issues using electrical data, statistical analysis, failure analysis inputs, and process history.
• Contribute to design-of-experiments planning, split‑lot analysis, process change evaluation, and technology transfer activities.
• Develop automated data analysis workflows and characterization dashboards using tools such as Python, JMP, Excel, MATLAB, or equivalent platforms.
• Prepare clear technical reports, qualification summaries, review presentations, and engineering recommendations for internal stakeholders.
• Mentor junior engineers and help build SiC technology expertise within the India Center of Excellence.

Qualifications

Required Qualifications

• Bachelor’s or Master’s degree in Electrical Engineering, Electronics Engineering, Materials Science, Physics, Microelectronics, Semiconductor Technology, or a related discipline.
• 4–8 years of relevant experience in semiconductor device engineering, power device characterization, reliability, test, product engineering, process integration, or technology development.
• Strong understanding of SiC power device physics, including MOSFETs, JFETs, Schottky diodes, PiN diodes, gate oxide behavior, body diode behavior, and high-voltage device operation.
• Hands‑on experience with semiconductor characterization equipment such as curve tracers, high‑voltage SMUs, parametric analyzers, oscilloscopes, double‑pulse testers, thermal chambers, probe stations, or reliability stress systems.
• Experience analyzing device performance over voltage, current, temperature, switching, and stress conditions.
• Working knowledge of reliability mechanisms in wide‑bandgap power devices, including gate oxide degradation, threshold voltage instability, leakage drift, dynamic RDS(on), bipolar degradation, trapping effects, and package‑related thermo‑mechanical stress.
• Ability to interpret statistical data, identify trends, communicate technical conclusions, and recommend corrective actions.
• Strong written and verbal communication skills, with the ability to collaborate across global, cross‑functional teams.

Preferred Qualifications

• Master’s degree or Ph.D. with specialization in power semiconductor devices, SiC technology, semiconductor reliability, or power electronics.
• Experience with 650 V, 750 V, 1200 V, 1700 V, or higher‑voltage SiC MOSFET and diode technologies.
• Familiarity with automotive, industrial, or renewable‑energy qualification standards and customer requirements.
• Experience with TCAD, SPICE, electrothermal simulation, device modeling, or mission‑profile‑based reliability assessment.
• Exposure to wafer fabrication, epitaxy, implantation, oxidation, metallization, passivation, wafer thinning, assembly, or power module integration.
• Experience working with external foundries, OSATs, failure analysis labs, universities, or global technology partners.
• Demonstrated ability to publish technical work, file patents, or present in technical reviews, conferences, or customer‑facing forums.

Key Skills and Competencies

• Deep technical curiosity and strong problem‑solving discipline.
• Data‑driven decision‑making with strong statistical and analytical capability.
• Ability to connect device physics, process behavior, package effects, and application‑level performance.
• Comfort working in ambiguous technology‑development environments with evolving priorities.
• Strong collaboration across time zones with global engineering and business stakeholders.
• Clear communication of complex technical information to engineering, program, quality, and leadership audiences.
• Ownership mindset with the ability to independently drive experiments, analysis, reviews, and closure of technical issues.

Success Measures

• Timely execution of characterization, reliability, and technology‑development deliverables.
• High‑quality technical analysis that enables clear decisions on device performance, robustness, yield, and qualification readiness.
• Effective collaboration with global teams to resolve technology issues and accelerate project milestones.
• Measurable contribution to SiC technology capability building within the India Center of Excellence.
• Improved efficiency through reusable test methods, analysis templates, dashboards, or documented best practices.

Reporting and Collaboration

The role will report into the SiC Technology / Device Engineering leadership team and will work closely with global stakeholders in technology development, product engineering, reliability, quality, applications, packaging, test engineering, and manufacturing operations.