SiC Device Design Engineer

PeopleStrong; Bengaluru; On-site; INR 4,000,000 - 8,000,000; Full time

Job summary

LTST-L&T Semiconductor Technologies Limited in Bengaluru seeks a senior power semiconductor device designer to lead the design and optimization of SiC MOSFETs and GaN power devices for automotive and industrial applications.

You will benchmark design parameters, calibrate TCAD models, collaborate with cross-functional teams, and contribute to IP, publications, and reliability targets.

Qualifications

• MS/PhD in Electrical Engineering, Microelectronics, Semiconductor Physics, or related discipline.

Responsibilities

• Lead design and optimization of SiC MOSFETs and GaN power devices for automotive/industrial use.
• Benchmark critical design parameters across voltage nodes.
• Research novel architectures to improve performance and reliability.
• Define device architectures to meet electrical, thermal, reliability, and cost targets.
• Calibrate TCAD models using experimental data.
• Design edge termination structures for high/ultra-high voltage devices.
• Lead prototype evaluation and silicon debug with FA and Reliability teams.
• Collaborate with Process Integration, Product Engineering, Reliability, and external foundries.
• Assist in IP generation, reports, and publications.
• Provide technical guidance to junior engineers and review deliverables.
• Communicate complex ideas clearly to cross-functional and leadership teams.

Skills

TCAD simulation

Device layout

Reliability analysis

Statistical tools

External foundry collaboration

Model calibration

Experimental characterization

Education

MS/PhD in Electrical Engineering, Microelectronics, Semiconductor Physics, or related

Tools

JMP

Minitab

Job description

• LTST-L&T Semiconductor Technologies Limited

Posted On 09 Oct 2026

End Date 07 Apr 2027

Required Experience 10 - 16 years

Knowledge & Posting Location

SIC

Bachelor of Technology (BTech)

Job Description

Role

• Lead the design and optimization of next-generation SiC MOSFETs and GaN power devices for automotive and industrial applications.
• Benchmarking of critical design parameters in and across the voltage nodes.
• Research and evaluate novel architectures to improve performance and reliability.
• Define device architectures to achieve electrical, thermal, reliability, and cost targets.
• Support development and calibration of TCAD process and device simulation models using experimental characterization data.
• Design reliable edge termination structures for high and ultra-high voltage applications.
• Lead prototype evaluation, electrical characterization, and silicon debug activities in collaboration with Failure Analysis and Reliability teams.
• Optimize device designs considering process variation, manufacturability, and long-term reliability.
• Collaborate with Process Integration, Product Engineering, Reliability, and external foundry teams throughout product development.
• Support in IP generations, technical report writing, and research publications.
• Provide technical guidance to junior engineers and review technical deliverables.
• Clear communication of complex technological ideas to cross functional and leadership teams.

Requirements

• MS/PhD in Electrical Engineering, Microelectronics, Semiconductor Physics, or a related discipline.
• 6–10 years of experience in power semiconductor device design.
• Strong expertise in SiC MOSFETs, SiC diodes, GaN HEMTs, or advanced silicon power devices.
• Advanced knowledge of semiconductor device physics and wide bandgap materials.
• Expert-level experience with TCAD simulation and model calibration.
• Experience in device layout development and mask design.
• Strong understanding of silicon correlation and electrical characterization.
• Knowledge of reliability mechanisms including TDDB, HTRB, HTGB, HTOL, UIS, avalanche, and short-circuit ruggedness.
• Experience in JMP, Minitab, or other statistical tools.
• Familiarity with JEDEC and AEC-Q101 qualification standards.
• Experience collaborating with external foundries are desirable.

Patent contributions or published technical work are desirable