Non-Volatile Memory - NVM Architect

Onsemi; Bengaluru; On-site; INR 4,000,000 - 7,000,000; Full time

Job summary

Onsemi in Bengaluru seeks an experienced Non-Volatile Memory Architect to lead the definition, architecture and development of embedded memory IP for automotive, industrial, AI and mixed‑signal SoCs. Deep expertise in EEPROM, ReRAM, or Embedded Flash and a proven production track record are required.

This role demands strong technical leadership across memory technology, circuit design, compiler development, reliability and product integration while collaborating with process development,

Qualifications

• M.S. or Ph.D. in Electrical Engineering or related field.
• 15–18+ years of semiconductor memory design experience.
• Deep expertise in Embedded EEPROM, Embedded Flash, or ReRAM.
• Strong understanding of memory bitcell operation, sense amplifiers, write drivers, charge pumps, high‑voltage circuits.
• Experience with automotive‑grade memory development and reliability qualification.

Responsibilities

• Define the architecture of embedded NVM IP including EEPROM, ReRAM, and embedded Flash.
• Develop memory architecture specifications covering array and peripheral architecture, high‑voltage generation, read/write algorithms, ECC, BIST, DFT, and security features.
• Lead architecture reviews and drive cross‑functional technical decisions.
• Collaborate with process integration to optimize memory bitcells and process options.
• Develop product roadmaps for next‑generation embedded NVM technologies.
• Drive silicon bring‑up, characterization, failure analysis, and design improvements.
• Support customer engagements on architecture, reliability, qualification, and technology capabilities.
• Mentor junior architects and design engineers.

Skills

NVM architecture

Embedded EEPROM/Flash/ReRAM

Memory design

Automotive memory development

Leadership

Cross-functional collaboration

Education

MS or PhD in Electrical Engineering or related field

Job description

Senior NVM Architect (EEPROM / ReRAM / Flash)

Position Summary

We are seeking an experienced Non-Volatile Memory (NVM) Architect to lead the definition, architecture, and development of next-generation embedded memory IP solutions for automotive, industrial, AI, and mixed-signal SoCs. The ideal candidate will possess deep expertise in EEPROM, ReRAM, or Embedded Flash technologies and have a proven track record of delivering silicon‑proven memory architectures from concept through production.

This role requires strong technical leadership across device technology, memory architecture, circuit design, compiler development, reliability, and product integration while working closely with process development, analog, digital, verification, layout, product engineering, and system architects.

Responsibilities

Key Responsibilities

• Define the architecture of embedded NVM IP including EEPROM, ReRAM, and embedded Flash.
• Develop memory architecture specifications covering:
  • Array organization
  • Peripheral architecture
  • High‑voltage generation
  • Read/write algorithms
  • Program/erase operations
  • ECC implementation
  • Redundancy
  • Built‑In Self Test (BIST)
  • DFT architecture
  • Security features
• Collaborate with process integration teams to optimize memory bitcells and process options.
• Define memory compiler requirements supporting multiple capacities, word widths, redundancy options, and customer configurability.
• Lead architecture reviews and technical decision making across cross‑functional teams.
• Develop product roadmaps for next‑generation embedded NVM technologies.
• Drive silicon bring‑up, characterization, failure analysis, and design improvements.
• Support customer engagements on architecture, reliability, qualification, and technology capabilities.
• Mentor junior architects and design engineers.

Qualifications

Required Qualifications

• M.S. or Ph.D. in Electrical Engineering or related field.
• 15-18+ years of semiconductor memory design experience.
• Deep expertise in one or more of:
  • Embedded EEPROM
  • Embedded Flash
  • ReRAM
• Strong understanding of:
  • Memory bitcell operation
  • Sense amplifiers
  • Write drivers
  • Charge pumps
  • High‑voltage circuits
  • Reference generation
  • Timing architecture
• Experience with automotive‑grade memory development.
• Knowledge of semiconductor reliability including:
  • Endurance
  • Retention
  • Read disturb
  • Write disturb
  • Cycling degradation
  • HTOL
  • Electromigration
  • Data retention qualification
  • Experience bringing multiple memory products to production