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Ferroelectric Memory is seeking an experienced IC Design Engineer specializing in CMOS analog/mixed-signal design and emerging NVM devices to advance hafnium oxide ferroelectric memory tech. You will collaborate with global teams in Milan or Dresden to convert memory concepts into silicon.
The role requires a 5–10 year background in CMOS analog/mixed-signal design, hands-on Cadence and Verilog experience, and strong problem-solving skills in a cross-functional setting.
Ferroelectric Memory is seeking an experienced IC Design Engineer specializing in CMOS analog/mixed-signal design and emerging NVM devices to advance hafnium oxide ferroelectric memory tech. You will collaborate with global teams in Milan or Dresden to convert memory concepts into silicon.
The role requires a 5–10 year background in CMOS analog/mixed-signal design, hands-on Cadence and Verilog experience, and strong problem-solving skills in a cross-functional setting.