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The ESRF - The European Synchrotron invites applications for a PhD thesis on Sub Nanosecond Imaging of Operating Microelectronic Devices by X-ray Diffraction Microscopy at Beamline ID01. The project seeks to illuminate thermomechanical behavior in SiGe(Sn) heterostructures under realistic operation, using X-ray diffraction microscopy for 3D spatial and temporal strain imaging.
Collaborations span European semiconductor research groups; the successful candidate will join an international network
Sub Nanosecond Imaging of Operating Microelectronic Devices by X-ray Diffraction Microscopy. Beamline ID01, at the ESRF is a world leading instrument dedicated to micro- and nano-beam X-ray diffraction imaging experiments. It enables advanced studies of epitaxial materials and microelectronic devices, including time‑resolved full‑field diffraction microscopy. The ID01 team has successfully carried out several lighthouse experiments that attract collaborators and users worldwide.
Sub Nanosecond Imaging of Operating Microelectronic Devices by X-ray Diffraction Microscopy. Beamline ID01, at the ESRF is a world leading instrument dedicated to micro‑and nano‑beam X‑ray diffraction imaging experiments. It enables advanced studies of epitaxial materials and microelectronic devices, including time‑resolved full‑field diffraction microscopy. The ID01 team has successfully carried out several lighthouse experiments that attract collaborators and users worldwide.
The successful candidate will join the team and collaborate with a network of European semiconductor device research groups and technology organisations. These partners focus on applied materials and devices in the time domain. In particular, the project addresses key challenges limiting efficiency and life‑time of microelectronic and optoelectronic devices based on SiGe(Sn) heterostructures, namely heat generation and strain‑induced degradation during operation. The improvement of device design and fabrication requires an experimental technique capable of probing the spatial and temporal distribution of lattice strain under realistic operating conditions. This can be achieved usingX‑ray Diffraction Microscopy in the unique set‑up at ID01. This project will provide fundamental understanding of thermomechanical behaviour and energy dissipation in technologically and economically relevant semiconductor devices. In addition, it will advance the X‑ray diffraction microscopy methodology toward 3D spatial and temporal strain‑temperature imaging for the optimisation of next‑generation electronic and optoelectronic devices.
Tobias Schülli (tel.: +33 (0)4 76 88 22 80, email: schulli@esrf.fr)
The successful candidate will have to assure to fulfil all conditions and respect deadlines for enrolment in the doctoral school at Department of Sciences, Rome Tre University, Roma, Italy.
For further information on employment terms and conditions, please refer to https://www.esrf.fr/home/Jobs/what-we-offer.html
The ESRF is an equal opportunity employer and encourages applications from disabled persons.
More details about the Nextstep Doctoral Programme on www.nextstep-programme.eu
NEXTSTEP will train 36 enthusiastic researchers to exploit the unique and transversal capabilities of analytical research infrastructures in tackling the challenges associated with sustainable development and industrial competitiveness in the areas of “Health”, “Digital, Industry & Space”, “Climate, Energy and Mobility” and “Food, Bioeconomy, Natural Resources, Agriculture and Environment”, which are at the heart of Horizon Europe. Host laboratories: ESRF and ILL (France), FZJ (Germany), AREA (Italy), NTNU (Norway).