ALD Engineer (m/f/d)
HighTech Startbahn GmbH (HTSB)
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Benefits offered by this job
Job summary
Ferroelectric Memory GmbH (FMC) in Grenoble, France, seeks a Senior ALD Engineer to lead advanced dielectric and metal ALD development for next‑gen ferroelectric memory technology. Based in Grenoble, you will own 300 mm ALD processes, drive improvements, and collaborate with global partners to accelerate production readiness.
The role emphasizes hands‑on ALD, electrical characterization, and cross‑functional teamwork in an innovative, international environment with opportunities for travel.
Qualifications
- Master’s degree or PhD in physics, chemistry, electrical engineering, materials or related field.
- Minimum 6 years of industry experience (or 4+ years with a PhD).
- Solid background in semiconductor process development and manufacturing.
- Proven experience as a tool owner or unit process owner in production.
- Hands-on experience with metal ALD and HfO2/ZrO2 deposition processes.
- Experience in fabrication of high aspect ratio HAR capacitor structures.
- Practical experience with electrical characterization, data analysis, and statistics (JMP/Python).
- Strong English communication, written and spoken.
Responsibilities
- Develop, optimize, and maintain dielectric (HZO and related) and metal ALD processes for advanced memory applications.
- Drive continuous improvements of process flows, film stacks, and integration schemes.
- Define and execute experimental plans aligned with project priorities and roadmaps.
- Organize and evaluate electrical, structural, and materials characterization activities.
- Analyze experimental data and integrate results into FMC’s database and knowledge systems.
Skills
Education
Tools
Job description
As a Senior ALD (Atomic Layer Deposition) Engineer (m/f/d) based in Grenoble, France, you will lead the development and optimization of advanced dielectric and metal deposition processes for FMC’s next-generation ferroelectric memory technology.
- Master’s degree or PhD in Physics, Chemistry, Electrical Engineering, Material Science, or a related field
- Minimum 6 years of relevant industry experience (or 4+ years with a PhD)
- Solid background in semiconductor process development and manufacturing
- Proven experience as a tool owner or unit process owner in a production environment
- Hands-on experience with metal ALD and HfO₂/ZrO₂ deposition processes
- Experience in the fabrication of high aspect ratio (HAR) capacitor structures
- Practical experience with electrical characterization, data analysis, and statistical evaluation using JMP, Python, or comparable tools
- Strong English communication skills, written and spoken
- Develop, optimize, and maintain dielectric (HZO and related materials) and metal ALD processes for advanced memory applications
- Drive continuous improvements of process flows, film stacks, and integration schemes
- Define and execute experimental plans aligned with project priorities and development roadmaps
- Organize and evaluate electrical, structural, and materials characterization activities
- Analyze experimental data and integrate results into FMC’s database and knowledge management systems
- Take full ownership of FMC’s processes on a 300 mm ALD cluster
- Ensure stable process performance, contamination control, and operational excellence
- Coordinate tool interventions, hardware upgrades, qualifications, and maintenance activities
- Manage consumables and support continuous process improvement initiatives
- Work closely with fab engineers and operational teams to maintain a high-performing manufacturing environment
- Collaborate closely with FMC’s Process Integration, Stack Development, and Technology Development teams
- Participate in technical discussions with research institutes, equipment suppliers, and material vendors
- Support process transfer, tool qualification, and ramp-up activities at external manufacturing sites
- Provide regular project updates and contribute to development planning and prioritization
- Contribute to the development of FMC’s intellectual property portfolio, including patents, trade secrets, and proprietary know-how
- Support the industrialization of breakthrough ferroelectric memory technologies
- Highly organized with a strong ability to manage multiple priorities and track project progress
- Analytical thinker with excellent problem-solving and troubleshooting skills
- Structured, self-motivated, and capable of working independently
- Hands-on engineer with a passion for developing innovative semiconductor technologies
- Strong communicator who enjoys working in international and cross-functional teams
- Willingness to travel internationally as required
You thrive in an environment where innovation meets manufacturing. You enjoy taking ownership, solving complex technical challenges, and working closely with fab partners, suppliers, and development teams to bring new technologies from concept to production.
Experience with ferroelectric hafnium oxide technologies, as well as electrical or structural characterization of ferroelectric materials and devices, would be highly advantageous. Additional language skills in French and/or Mandarin are a plus and will support collaboration within FMC’s growing international ecosystem.
- Annual vacation and other benefits in accordance to the collective bargain agreement
- Join a highly experienced, international and growing team
- Company-subsidized meals
Founded in 2016, FMC is at the forefront of innovation in ferroelectric memory, enabling faster, more energy‑efficient, and scalable solutions for future computing systems.
Our team combines deep expertise in semiconductor physics, device engineering, and system design to redefine memory architectures for emerging applications in AI, IoT, and high‑performance computing.
Join us and be part of a team shaping the future of memory technology.
- Cutting-edge memory technology
- Strong presence in the european semiconductor ecosystem
- High ownership and impact-driven roles
- International and collaborative team
- Direct contribution to AI and next‑generation computing
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