SiC Power Devices R&D Intern – TCAD & Design

Hitachi Automotive Systems Americas, Inc.; Lenzburg; Vor Ort; CHF 22.000 - 29.000; Vollzeit

Zusammenfassung

The opportunity is an R&D internship with Hitachi Energy Ltd in Lenzburg, Switzerland, focusing on SiC power-device design and TCAD simulation within a collaborative team. You will contribute to the full development cycle of SiC MOSFETs and deepen your semiconductor knowledge, gaining hands-on experience across design, simulation, and validation.

You will collaborate with senior engineers and process specialists, developing TCAD skills, and presenting findings in project reviews.

Qualifikationen

• Master’s degree in Electrical Engineering, Physics, or Materials Science.
• Experience with TCAD tools, ideally in SiC device simulation.
• Understanding of SiC device physics.
• Basic knowledge of semiconductor fabrication processes.

Aufgaben

• Assist in the conceptual design and TCAD simulation of SiC power devices.
• Work with our experienced engineers to refine device structures and optimize performance.
• Predict electrical characteristics and validate simulation results.
• Analyze data, document findings, and present insights in team meetings.
• Contribute to regular project reviews with ideas for performance, cost and manufacturability improvements.

Kenntnisse

TCAD tools

SiC device physics

Analytical skills

English communication

Ausbildung

Master’s degree in Electrical Engineering, Physics, or Materials Science

Jobbeschreibung

The opportunity is an R&D internship with Hitachi Energy Ltd in Lenzburg, Switzerland, focusing on SiC power-device design and TCAD simulation within a collaborative team. You will contribute to the full development cycle of SiC MOSFETs and deepen your semiconductor knowledge, gaining hands-on experience across design, simulation, and validation.

You will collaborate with senior engineers and process specialists, developing TCAD skills, and presenting findings in project reviews.