PhD position: Strained Germanium Quantum-Well Transistors for Integrated Cryogenic Spin Qubit Readout (P2607)

Universität Basel; Basel; Vor Ort; CHF 52.000 - 70.000; Vollzeit

Benefits dieser Stelle

Excellent scientific environment

Very competitive employment conditions

Supportive community

Zusammenfassung

Universität Basel in Basel, Switzerland, invites applications for a PhD position titled “Strained Germanium Quantum-Well Transistors for Integrated Cryogenic Spin Qubit Readout” starting 1 January 2027. You will join cutting-edge research on hole-spin qubits in planar Ge/SiGe quantum-well transistors and pursue integrated cryogenic readout concepts.

The successful candidate will study advanced material growth, nanoscale fabrication, and cryogenic device physics to enable scalable quantum

Qualifikationen

• Master studies in nanoscience, physics or engineering.
• Experience in fabrication or transport measurements is desirable but not compulsory.

Aufgaben

• Explore strained Ge/SiGe quantum-well transistors for integrated cryogenic readout.
• Develop concepts for scalable quantum hardware within a single material platform.
• Collaborate with active research groups at Universität Basel and the Swiss Nanoscience Institute (SNI).

Kenntnisse

Fabrication experience

Transport measurements

Cryogenic measurements

Ausbildung

Master's degree in nanoscience/physics/engineering

Tools

Cleanroom facilities

Nanofabrication tools

Jobbeschreibung

PhD position: Strained Germanium Quantum-Well Transistors for Integrated
Cryogenic Spin Qubit Readout (P2607)

100% position for 4 years, earliest starting date: 1 January 2027

Building a quantum computer that can solve real-world problems will require the integration of many highly coherent qubits. Hole-spin qubits in planar germanium quantum wells are among the most promising candidates for this goal, combining fast electrical control, compact device geometry, and excellent performance in a semiconductor platform. As this technology advances, one of the main remaining challenges is readout: the quantum state of each qubit must be converted into a small electrical signal and detected quickly and reliably. At present, this still depends strongly on external wiring and amplification hardware, which becomes increasingly difficult to scale as the number of qubits grows.

Your position

This PhD project aims to explore strained Ge/SiGe quantum-well transistors as integrated cryogenic readout devices for hole-spin qubits. By operating amplification and signal routing closer to the quantum device, the project seeks to enable more compact and scalable readout architectures at very low temperatures. By combining advanced material growth, nanoscale fabrication, and cryogenic device physics within a single material platform, the work aims to develop new concepts for scalable quantum hardware. More broadly, it will strengthen planar germanium as a platform for integrated quantum nanoelectronics and help open a path towards large-scale semiconductor quantum processors.

Your profile

The candidate must have Master studies in nanoscience, physics or any related
engineering. Previous experience in fabrication or transport measurements is desired but not compulsory.

We offer you

• Excellent scientific and social environment
• Very competitive employment conditions
• Membership in a very supportive and recognised community

The successful candidate will become a member of very active research groups and of the Swiss Nanoscience Institute (SNI) PhD school with ~30 currently supported scientists. The SNI covers a wide variety of topics, including cutting edge quantum physics and chemistry, material science, nanotechnology, biochemistry, cell biology, or medical research.