PhD position: Strained Germanium Quantum-Well Transistors for Integrated Cryogenic Spin Qubit Readout (P2607)

Karlstad University; Basel; Vor Ort; CHF 60.000 - 75.000; Vollzeit

Benefits dieser Stelle

Excellent scientific environment

Competitive employment conditions

Supportive community

Zusammenfassung

The University of Basel invites applications for a PhD position focused on strained Ge/SiGe quantum-well transistors for integrated cryogenic spin qubit readout. The project aims to develop scalable readout concepts within a single material platform, addressing design and measurement challenges at very low temperatures.

The successful candidate will join active research groups and the Swiss Nanoscience Institute (SNI) PhD school, benefiting from a vibrant scientific community and strong support

Qualifikationen

• Master studies in nanoscience, physics or related engineering.
• Experience in fabrication or transport measurements is desirable but not required.

Ausbildung

Master's degree in nanoscience, physics or related engineering

Jobbeschreibung

PhD position: Strained Germanium Quantum-Well Transistors for Integrated Cryogenic Spin Qubit Readout (P2607)

University of Basel ranks among the world’s one hundred best universities and boast a top-ten place among German-speaking universities.

Building a quantum computer that can solve real-world problems will require the integration of many highly coherent qubits. Hole-spin qubits in planar germanium quantum wells are among the most promising candidates for this goal, combining fast electrical control, compact device geometry, and excellent performance in a semiconductor platform. As this technology advances, one of the main remaining challenges is readout: the quantum state of each qubit must be converted into a small electrical signal and detected quickly and reliably. At present, this still depends strongly on external wiring and amplification hardware, which becomes increasingly difficult to scale as the number of qubits grows.
This PhD project aims to explore strained Ge/SiGe quantum-well transistors as integrated cryogenic readout devices for hole-spin qubits. By operating amplification and signal routing closer to the quantum device, the project seeks to enable more compact and scalable readout architectures at very low temperatures. By combining advanced material growth, nanoscale fabrication, and cryogenic device physics within a single material platform, the work aims to develop new concepts for scalable quantum hardware. More broadly, it will strengthen planar germanium as a platform for integrated quantum nanoelectronics and help open a path towards large-scale semiconductor quantum processors.
The candidate must have Master studies in nanoscience, physics or any related
engineering. Previous experience in fabrication or transport measurements is desired but not compulsory.

• Excellent scientific and social environment
• Very competitive employment conditions
• Membership in a very supportive and recognised community

The successful candidate will become a member of very active research groups and of the Swiss Nanoscience Institute (SNI) PhD school with ~30 currently supported scientists. The SNI covers a wide variety of topics, including cutting edge quantum physics and chemistry, material science, nanotechnology, biochemistry, cell biology, or medical research.

Job details

Title

PhD position: Strained Germanium Quantum-Well Transistors for Integrated Cryogenic Spin Qubit Readout (P2607)