PhD in Strained Ge Quantum-Well Readout for Spin Qubits

Universität Basel; Basel; Vor Ort; CHF 52.000 - 70.000; Vollzeit

Benefits dieser Stelle

Excellent scientific environment

Very competitive employment conditions

Supportive community

Zusammenfassung

Universität Basel in Basel, Switzerland, invites applications for a PhD position titled “Strained Germanium Quantum-Well Transistors for Integrated Cryogenic Spin Qubit Readout” starting 1 January 2027. You will join cutting-edge research on hole-spin qubits in planar Ge/SiGe quantum-well transistors and pursue integrated cryogenic readout concepts.

The successful candidate will study advanced material growth, nanoscale fabrication, and cryogenic device physics to enable scalable quantum

Qualifikationen

• Master studies in nanoscience, physics or engineering.
• Experience in fabrication or transport measurements is desirable but not compulsory.

Aufgaben

• Explore strained Ge/SiGe quantum-well transistors for integrated cryogenic readout.
• Develop concepts for scalable quantum hardware within a single material platform.
• Collaborate with active research groups at Universität Basel and the Swiss Nanoscience Institute (SNI).

Kenntnisse

Fabrication experience

Transport measurements

Cryogenic measurements

Ausbildung

Master's degree in nanoscience/physics/engineering

Tools

Cleanroom facilities

Nanofabrication tools

Jobbeschreibung

Universität Basel in Basel, Switzerland, invites applications for a PhD position titled “Strained Germanium Quantum-Well Transistors for Integrated Cryogenic Spin Qubit Readout” starting 1 January 2027. You will join cutting-edge research on hole-spin qubits in planar Ge/SiGe quantum-well transistors and pursue integrated cryogenic readout concepts.

The successful candidate will study advanced material growth, nanoscale fabrication, and cryogenic device physics to enable scalable quantum