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Hitachi Energy in Switzerland offers a six-month internship in electronics reliability research focusing on SiC MOSFET aging and threshold voltage stability. You will support a real-time aging-monitoring system and contribute to an advanced test setup using a 3.3 kV, 150 A half-bridge test platform.
The role involves measurement campaigns, data analysis, sensor prototype ideas, and automated data collection software.
The energy landscape is rapidly evolving, requiring increasingly complex and reliable power distribution systems. The growing integration of renewable energy sources and converter interfaces introduces new challenges for transmission and distribution operators. Silicon carbide (SiC) power semiconductors have matured significantly and offer superior electrical performance, making them highly attractive for power electronics applications. However, challenges related to the gate stack reliability of SiC MOSFETs must still be addressed to enable their widespread adoption. The Semiconductors Packaging and Reliability Engineering research team seeks an intern to support the development of an innovative test setup for reliability investigations. The setup targets threshold voltage stability of SiC MOSFETs under extensive cycling and accelerated aging conditions. The successful candidate will develop and monitor a real-time system for tracking device aging. Experiments are conducted on a double pulse tester with a half-bridge evaluation board rated at 3.3 kV and 150 A. The internship duration is six months.
We are a technology-driven company with a strong focus on innovation, continuous improvement, and sustainable manufacturing. We offer flexible working conditions, dedicated mentorship, and a supportive, inclusive environment where you can grow personally and professionally – empowering you to thrive while balancing life and work. Publication date : 2026-08-03