Job offer

European Commission; Canada; On-site; CAD 60,000 - 80,000; Full time

Job summary

A leading research institute in Canada is seeking a postdoctoral researcher to develop innovative cryogenic-compatible neuromorphic circuits. The successful candidate will work on CMOS-OxRAM technologies, contributing to groundbreaking advancements in quantum computing. This role offers a collaborative environment with top researchers and a chance to impact the future of AI and QC technologies.

Qualifications

• PhD or equivalent in Electrical or Materials Engineering required.
• Specialization in nanotechnology or electrical engineering preferred.

Responsibilities

• Fabricate CMOS-OxRAM circuits with superconducting interconnects.
• Conduct electrical characterizations at room and cryogenic temperatures.
• Demonstrate in-memory computing with OxRAM crossbar arrays.

Skills

Adaptability

Teamwork

Problem Solving

Knowledge in Nanofabrication

Cryogenic Measurements

Education

PhD in Electrical Engineering

PhD in Materials Engineering

Job description

Interdisciplinary Institute for Technological Innovation (3IT)

Organisation/Company Université de Sherbrooke Department Interdisciplinary Institute for Technological Innovation (3IT) Research Field Engineering » Electrical engineering Researcher Profile First Stage Researcher (R1) Positions Postdoc Positions Country Canada Application Deadline 31 Aug 2025 - 00:00 (America/Toronto) Type of Contract Temporary Job Status Full-time Hours Per Week 37 Offer Starting Date 1 Sep 2025 Is the job funded through the EU Research Framework Programme? Other EU programme Is the Job related to staff position within a Research Infrastructure? No

Offer Description

Context:

The latest major breakthrough in quantum computing (QC) has been the demonstration of quantum systems with more than 50 superconducting qubits allowing quantum supremacy for the first time. Other very promising qubit technologies include spin qubits based on solid-state quantum dots (QDs). They leverage the great maturity of CMOS technologies to offer low cost and highly scalable quantum devices. Major research centers like CEA, QuTech and Intel have started to report high quality spin qubits based on advanced CMOS technologies. However, the tuning and control of QDs are still performed mostly by hand with bulky classical electronics located outside the cryostat. The absence of fully integrated cryo-electronics capable of automatically tuning the QDs makes it currently impossible to build a large-scale quantum computer due to the “wiring bottleneck” between the quantum devices and the control electronics. In this context, a 3IT-1QBit consortium composed of 10 world-class researchers and engineers in Canada is starting an ambitious research program to develop innovative solutions to that problem. We propose a 2-year postdoc project to investigate cryogenic-compatible neuromorphic circuits based on TiO2 memristors (i.e. OxRAM) and CMOS circuits interconnected with superconducting materials. This CMOS-OxRAM chip will allow to implement automatic calibration methods of QDs using low power neural networks directly implemented into the cryostat.

Research project: The postdoc fellow will be in charge of the fabrication of CMOS-OxRAM circuits with superconducting interconnects and the demonstration of in-memory computing in cryogenic conditions. This project will build upon the work of Pr. Dominique Drouin’s group at 3IT on TiO2-based memristors and QD auto-tuning using neural networks:

Tasks: the postdoc fellow will have to (i) fabricate crossbar arrays of TiO2-based memristors on top of CMOS circuits with newly developed superconducting interconnects, (ii) perform the physico-chemical and morphological characterisations of the CMOS-OxRAM circuits to validate their quality, (iii) conduct in-depth electrical characterizations of the CMOS-OxRAM circuits at room and cryogenic temperatures in the Quantum Fab Lab of the IQ of UdeS, (iv) investigate the benefits of using superconducting interconnects with regards to OxRAM switching behavior and programing precision, (v) demonstrate and benchmark accuracy of in-memory computing with an 8×8 OxRAM crossbar array at room and cryogenic temperatures.

Supervision & work environment: The project will be realized under the direction of Pr. Dominique Drouin and Pr. Serge Ecoffey within the IRL-LN2, an International Research Laboratory of the French CNRS based in Sherbrooke (QC, Canada). Pr. Fabien Alibart and Pr. Yann Beilliard will also participate in the supervision. The work will be carried out mainly at the Interdisciplinary Institute for Technological Innovation (3IT) and at the Quantum Institute (IQ) of UdeS, in close collaboration with the company 1QBit. 3IT is a unique institute in Canada, specializing in the research and development of innovative technologies for energy, electronics, robotics and health. The IQ is a state-of-the-art institute whose mission is to invent the quantum technologies of tomorrow and transfer them to the industry. 1QBit is a Canadian leader in QC, AI and high-performance computing. Its multidisciplinary team designs control systems, compilers and service architectures for exotic and next generation computing platforms. The student will thus benefit from an exceptional research environment that combines students, professionals, professors and industrialists working hand-in-hand to develop the future technologies for AI and QC.

Where to apply

E-mail [e-mail]

Requirements

Research Field Engineering » Electrical engineering Education Level PhD or equivalent

Research Field Engineering » Materials engineering Education Level PhD or equivalent

Skills/Qualifications

Researched profile:

• Specialization in nanotechnology, electrical engineering, or materials science
• Strengths: knowledge in nanofabrication, resistive memories, in-memory computing, cryogenic measurements
• Excellent adaptability, autonomy, teamwork and problem solving skills
• Strong interest for design, experimental cleanroom work and interdisciplinary research and development