TCAD Simulations of State-Of-The-Art CMOS Devices at Cryogenic Temperatures

Imec India Private Limited; Vlaams-Brabant; Sur place; EUR 125 000 - 150 000; Plein temps

Résumé du poste

A leading advanced technology research center in Leuven is offering a Master project/internship focused on TCAD simulations of advanced CMOS devices at cryogenic temperatures. The role involves analyzing device performance under low temperatures, performing simulations, and collaborating with a recognized research team. Candidates should have a relevant Master's degree and a background in Electrotechnics, Physics, or Nanotechnology. This is a unique opportunity for hands-on research in cryogenic electronics.

Qualifications

• Background in Electrotechnics/Electrical Engineering, Physics, or Nanoscience & Nanotechnology.
• Ability to present findings professionally.
• Experience with industry-standard simulation tools.

Responsabilités

• Analyze the impact of cryogenic conditions on CMOS device parameters.
• Investigate the influence of cryogenic temperatures on device reliability.
• Collaborate with a research team on cryogenic electronics.
• Perform TCAD simulations of CMOS devices at cryogenic temperatures.
• Refine simulation models for temperature-dependent effects.
• Present research findings to a technical audience.

Connaissances

Cryogenic electronics knowledge

Simulation skills

Data analysis

Collaboration

Formation

Master of Engineering Technology

Master of Engineering Science

Master of Science

Outils

TCAD simulation tools

Description du poste

/ TCAD Simulations of State-Of-The-Art CMOS Devices at Cryogenic Temperatures

TCAD Simulations of State-Of-The-Art CMOS Devices at Cryogenic Temperatures

Master projects/internships - Leuven | More than two weeks ago

Explore the limits of advanced CMOS device simulation

As quantum computing and cryogenic electronics becomeincreasingly important, understanding the behavior of CMOS devices at cryogenictemperatures is critical. Modern CMOS technology is optimized forroom-temperature operation. However, as the demand for cryogenic applicationsgrows, there is a pressing need to study device behavior at very lowtemperatures. The electrical properties of materials and interfaces atcryogenic temperatures can deviate significantly from their room temperaturevalues, affecting device performance, reliability, and noise characteristics.

Technology Computer-Aided Design (TCAD) simulations offer apowerful tool to analyse CMOS devices under cryogenic conditions. Thesesimulations enable researchers to predict the performance of advanced CMOSnodes at extremely low temperatures, offering critical insights for designingand optimizing devices specifically for cryogenic applications.

This project will focus on using TCAD to simulate and studystate-of-the-art CMOS technology nodes at cryogenic temperatures, with a strongemphasis on validating physical models (band tails, carrier mobility, chargetrapping, etc.) through continuous comparison with experimental data.

Project Tasks and Objectives:

• Analysethe impact of cryogenic conditions on key CMOS device parameters such asthreshold voltage, carrier mobility, and subthreshold slope
• Investigatethe influence of cryogenic temperatures on interface and bulk defects,leakage currents, and overall device reliability
• Collaboratewith an internationally recognized research team working on cryogenicelectronics
• Setup and perform TCAD simulations of scaled CMOS devices at cryogenictemperatures using industry-standard simulation tools
• Developand refine simulation models to account for temperature-dependent effectsin advanced technology nodes
• Presentfindings in a clear and professional manner to a technical audience

Type of project: Combination of internship and thesis

Duration: 1 academic year

Required degree: Master of Engineering Technology, Master of Engineering Science, Master of Science

Required background: Electrotechnics/Electrical Engineering, Physics, Nanoscience & Nanotechnology

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