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A leading research institution is offering a Master Thesis opportunity focused on low temperature spectroscopy of SiC defects, aiming to characterize defects in Silicon Carbide transistors. This role involves various experimental tasks, data analysis, and the possibility of working in modern lab facilities with international training opportunities.
This master thesis focuses on the characterization of defects in a Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor. The work involves setting up an optical experiment to measure fluorescence from SiC-chips after laser excitation at cryogenic temperatures in a closed cycle He-cryostat. Responsibilities include:
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Important facts about SAL
This position is subject to the Collective Agreement for employees in non-university research (Research CA). The monthly gross salary is EUR 1,863, paid 14 times a year.
Title: Master Thesis – Low temperature spectroscopy of SiC defects (all genders) // Job-ID: 157-0
Status: This job posting is active and accepting applications.