Silicon Carbide for Solid-State Qubits, Opto-Electronics & Power Electronics

ORAU; Adelphi (MD); On-site; USD 50,000 - 70,000; Full time

Job summary

ORAU is offering a Postdoctoral Fellowship opportunity at the U.S. Army Research Laboratory in Adelphi, MD. This role focuses on silicon carbide research for quantum technologies, including defect engineering and hybrid device development.

Candidates must hold a PhD in relevant fields, possess postdoctoral experience in semiconductor growth, and demonstrate strong analytical and communication skills. Responsibilities include developing research proposals and conducting collaborative laboratory experiments.

Qualifications

• PhD in a relevant field is mandatory.
• Postdoctoral research experience in semiconductor growth or processing.
• Strong analytical and problem-solving skills required.

Responsibilities

• Develop research proposals focused on silicon carbide for quantum technologies.
• Conduct laboratory experiments related to device fabrication.
• Collaborate with a multidisciplinary team in research activities.

Skills

Analytical skills

Problem-solving skills

Communication skills

Education

Doctoral degree (PhD) in Physics, Materials Science, Electrical Engineering, or related field

Tools

CVD/MBE techniques

Lithography

XRD/AFM/SEM/XPS techniques

Job description

Overview

A Postdoctoral Fellowship opportunity is available with the U.S. Army Research Laboratory's Sensors and Electron Devices Directorate (SEDD) located in Adelphi, MD. The focus is on silicon carbide (SiC) research for quantum technologies, including defect engineering, photonic crystal fabrication, and hybrid device development.

Responsibilities

• Develop research proposals in one of the following areas:
  • Epitaxial growth of low‑strain, low‑defect density SiC by CVD and characterization for quantum spin qubits.
  • Modeling and fabrication of photonic crystal nanostructures in SiC for quantum devices and hybrid GaN/SiC optoelectronic sensors.
  • Development and demonstration of hybrid devices integrating quantum, opto‑electronic, MEMS, and power electronic components on SiC wafers.
• Perform laboratory experiments, device fabrication, and materials characterization.
• Collaborate with a multidisciplinary team of physicists, engineers, and chemists.
• Document and publish research findings in peer‑reviewed journals and present at conferences.

Qualifications & Experience

• Doctoral degree (PhD) in Physics, Materials Science, Electrical Engineering, or related field.
• Postdoctoral research experience in at least two of the following areas: epitaxial semiconductor growth (CVD, MBE), semiconductor processing (lithography, etching, deposition), magnetic resonance (ESR, NMR, ODMR), optical characterization (PL, SE, FTIR, Raman), electrical characterization (C‑V, Hall), or structural characterization (XRD, AFM, SEM, XPS).
• Strong analytical and problem‑solving skills.
• Excellent written and oral communication skills.

Eligibility

• U.S. citizenship required.
• Minimum 18 years of age.
• Other statutory requirements apply.

Contact

For more information, contact the advisor, Brenda VanMil, at [e-mail].