Principal Microelectronics Device Engineer - RF & GaN

Northrop Grumman; Manhattan Beach (CA); On-site; USD 114,000 - 213,000; Full time

Job summary

Northrop Grumman is seeking a Microelectronics Device Engineer to advance GaN and III-V semiconductor technologies at the Redondo Beach SPF. You will lead development from early research to production, focusing on mmW transistor design, experimental device development, and RF characterization.

The role requires collaboration with process engineers, circuit designers and test engineers in a fast-paced lab. Strong background in semiconductor physics and DOE methods is essential.

Qualifications

• Bachelor of Science in Electrical Engineering or related STEM discipline.
• Advanced degrees (MS/PhD) preferred for senior/principal levels.
• Experience with semiconductor device processing and GaN/HBT/HEMT technologies.

Responsibilities

• Lead development and maturation of novel III‑V semiconductor technologies from research through production.
• Conduct mmW transistor design, experimental device development, and RF characterization.
• Collaborate with process engineers, circuit designers, and test engineers in a lab environment.

Skills

Semiconductor device physics

HEMTs

Device engineering

Education

Bachelor of Science in Electrical Engineering

Master's degree in Electrical Engineering

PhD in Electrical Engineering (preferred)

Tools

Design-of-Experiments methodologies

GaN transistor development

Job description

Northrop Grumman is seeking a Microelectronics Device Engineer to advance GaN and III-V semiconductor technologies at the Redondo Beach SPF. You will lead development from early research to production, focusing on mmW transistor design, experimental device development, and RF characterization.

The role requires collaboration with process engineers, circuit designers and test engineers in a fast-paced lab. Strong background in semiconductor physics and DOE methods is essential.