Principal Lead, Dry Etch Development Engineer

1000 Micron Technology, Inc.; Boise (ID); On-site; USD 120,000 - 180,000; Full time

Benefits offered by this job

Medical/Dental/Vision

Paid time off

Paid holidays

Paid family leave

Job summary

Micron Technology, Inc. is seeking a Manufacturing Development Engineering leader for dry etch across shifts. You will guide development execution, mentor engineers, and drive throughput and data quality in a fast-paced 24/7 environment.

The role emphasizes people leadership, operations ownership, and deep dry etch expertise, with broad impact across technology development and measurable delivery improvements.

Qualifications

• Bachelor’s degree in engineering or equivalent semiconductor experience.
• Experience in dry etch process development and plasma fundamentals.
• Demonstrated leadership in a technical or manufacturing environment.
• Strong problem-solving and communication skills.
• Ability to manage execution across multiple teams and priorities.

Responsibilities

• Lead dry etch development execution and ensure efficient wafer flow and data quality
• Manage and develop engineers across shifts through coaching and mentorship
• Drive operational performance including cycle time, tool readiness, and execution metrics
• Partner with process, integration, and manufacturing teams to resolve issues
• Improve systems and workflows to increase development throughput

Skills

Leadership

Problem solving

Communication

Cross-functional collaboration

Education

Bachelor’s degree in engineering

PhD or MS +5 years or BS +10 years in semiconductors

Job description

Micron Technology, Inc. is seeking a Manufacturing Development Engineering leader for dry etch across shifts. You will guide development execution, mentor engineers, and drive throughput and data quality in a fast-paced 24/7 environment.

The role emphasizes people leadership, operations ownership, and deep dry etch expertise, with broad impact across technology development and measurable delivery improvements.