Power Device Process Integration Engineer

Alpha and Omega Semiconductor Ltd

Hillsboro (OR)

On-site

USD 90,000 - 140,000

Full time

4 days ago
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Job summary

Alpha and Omega Semiconductor Ltd is seeking an experienced Process Integration Engineer to join Jireh Semiconductor’s Hillsboro, Oregon facility. You will work with device/process module teams to develop silicon power device process technology and improve yield through flow implementation, electrical characterization, and wafer‑level testing.

The ideal candidate holds a Master’s or PhD in Electrical Engineering, with 3+ years in power device development, and knowledge of semiconductor process

Qualifications

  • Master’s or PhD in Electrical Engineering or related field.
  • 3+ years in a development role, power device focus preferred.
  • Working knowledge of semiconductor process technology and wafer fabrication.

Responsibilities

  • Focus on power device technologies (MOSFET/TVS) development and yield improvement.
  • Perform process simulation and create technology process flows with specs.
  • Define test structures for process integration and module development.
  • Design DOE and analyze results to optimize device architecture.
  • Collaborate with design groups to troubleshoot device issues and document findings.
  • Develop devices ensuring reliability; work with Product Engineering and Reliability.
  • Support NPI activities and analyze DOE/production data for new products.

Skills

Power device dev
Semiconductor process
Wafer fabrication
Device physics
DOE

Education

Master's or PhD in Electrical Engineering

Job description

Alpha and Omega Semiconductor Ltd is seeking an experienced Process Integration Engineer to join Jireh Semiconductor’s Hillsboro, Oregon facility. You will work with device/process module teams to develop silicon power device process technology and improve yield through flow implementation, electrical characterization, and wafer‑level testing.

The ideal candidate holds a Master’s or PhD in Electrical Engineering, with 3+ years in power device development, and knowledge of semiconductor process

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