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NASA's JPL postdoctoral position focuses on developing UV detector technologies using molecular beam epitaxy (MBE) for materials growth and interface engineering. The role emphasizes advancing MBE capabilities for band-structure engineering, surface passivation, and silicon-based photodetectors.
Applicants will engage in cleanroom fabrication, materials characterization (ellipsometry, AFM, SEM, TEM, XRD, SIMS), and device performance analysis to refine fabrication processes and improve detector
NASA's JPL postdoctoral position focuses on developing UV detector technologies using molecular beam epitaxy (MBE) for materials growth and interface engineering. The role emphasizes advancing MBE capabilities for band-structure engineering, surface passivation, and silicon-based photodetectors.
Applicants will engage in cleanroom fabrication, materials characterization (ellipsometry, AFM, SEM, TEM, XRD, SIMS), and device performance analysis to refine fabrication processes and improve detector