PhD Wet Process Development Engineer Intern

1000 Micron Technology, Inc.

Boise (ID)

On-site

USD 34,440,000 - 55,104,000

Full time

14 days+

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Benefits offered by this job

Medical insurance
Paid time off
Mentorship program

Job summary

Micron Technology, Inc. is seeking a 3D DRAM Wet Process Engineering Intern to contribute to cutting-edge semiconductor process development.

You will work with experienced engineers on wet process technologies, analyzing experimental and manufacturing data to drive improvements and deliver a final project presentation. The role emphasizes independent work, strong analytical skills, and communication, with exposure to AI-enabled data analysis and process optimization within a leading memory

Qualifications

  • Currently pursuing a Ph.D. in a technical field (Materials Science, Chemical Engineering, Chemistry or Physics).
  • Must not graduate before September 2027.
  • Strong data analysis and problem-solving skills.

Responsibilities

  • Develop and optimize wet process technologies for DRAM manufacturing.
  • Collaborate with cross-functional teams to implement process improvements.
  • Perform root-cause analysis and investigate failures to improve yield.
  • Analyze experimental data and manufacturing data to support tech decisions.
  • Apply AI/data-driven approaches to enhance analysis and productivity.

Skills

Data analysis
Statistical methods
Communication
Independent work

Education

PhD student in Materials Science or Chemical Engineering or Physics

Tools

Python
R / MATLAB

Job description

Micron Technology, Inc. is seeking a 3D DRAM Wet Process Engineering Intern to contribute to cutting-edge semiconductor process development.

You will work with experienced engineers on wet process technologies, analyzing experimental and manufacturing data to drive improvements and deliver a final project presentation. The role emphasizes independent work, strong analytical skills, and communication, with exposure to AI-enabled data analysis and process optimization within a leading memory

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