Lead Epitaxy Growth Engineer – Infrared Sensor Tech

FLIR Systems, Inc.

Camarillo (CA)

On-site

USD 91,000 - 121,000

Full time

4 days ago
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Benefits offered by this job

Salary & benefits
Health Insurance
Paid time off
401(k) match
Employee Stock Purchase Plan
Tuition reimbursement

Job summary

Teledyne Imaging Sensors seeks an Epitaxy Growth Engineer to lead MBE growth and characterization of HgCdTe wafers for infrared focal plane arrays and detectors. The role covers tool ownership, growth design, recipe writing, and post-growth analysis to correlate growth results with device performance.

Strong background in MBE growth of semiconductors and related materials, with production experience and demonstrated communication skills, is essential.

Qualifications

  • Hands-on expertise with MBE growth of semiconductors is required.
  • Experience in MBE tool maintenance and repair.
  • Background in opto-electronic semiconductor devices, optics, electronics, software, cryogenics, radiometric, and modelling, test, and analysis methods.
  • Excellent verbal and written communication skills.
  • Five plus (5+) years of related hands-on work experience in III-V or II-VI semiconductor MBE growth and characterization of semiconductor materials (direct HgCdTe experience is preferred).

Responsibilities

  • MBE growth production and characterization of HgCdTe wafers for infrared focal plane arrays and detectors.
  • MBE tool ownership from tool use planning, tool maintenance and repair, growth structure design, recipe writing, wafer growth, post growth wafer characterization and correlation of MBE growth results with device performance.
  • Innovate new growth and characterization techniques for yield improvements and increased wafer throughput.

Skills

MBE growth
Tool maintenance
Semiconductor devices
Communication skills
Laboratory teamwork

Education

PhD in Engineering
MS in Physics

Tools

MBE equipment
Wafer characterization tools

Job description

Teledyne Imaging Sensors seeks an Epitaxy Growth Engineer to lead MBE growth and characterization of HgCdTe wafers for infrared focal plane arrays and detectors. The role covers tool ownership, growth design, recipe writing, and post-growth analysis to correlate growth results with device performance.

Strong background in MBE growth of semiconductors and related materials, with production experience and demonstrated communication skills, is essential.

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