III-V Laser Device Development Engineer

Tower Semiconductor Ltd.; Newport Beach (CA); On-site; USD 140,000 - 210,000; Full time

Benefits offered by this job

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Job summary

Tower Semiconductor Ltd. is seeking a highly qualified candidate to lead development and optimization of III-V laser devices in its manufacturing facilities.

You will perform device simulations, growth technique development, and process integration to build devices in Tower fabs, followed by rigorous testing and analysis to drive yield improvements. Ideal candidates hold a PhD in semiconductor optics or equivalent and have hands-on experience with MOCVD/MBE, III-V processing, and photonics

Qualifications

• PhD in semiconductor optics or equivalent with deep device knowledge.
• Experience developing III-V processing steps and integration in a manufacturing setting.
• Strong understanding of lasers and III-V device performance metrics.

Responsibilities

• Lead development and optimization of III-V semiconductor lasers and related devices.
• Perform first-principles simulations and epitaxial growth technique development.
• Integrate devices into Tower fabs and analyze test results to improve yield.

Skills

III-V processing

Device integration

Laser tech

Optical characterization

Education

PhD in semiconductor optics

Tools

MOCVD

MBE

Silicon photonics

Job description

Tower Semiconductor Ltd. is seeking a highly qualified candidate to lead development and optimization of III-V laser devices in its manufacturing facilities.

You will perform device simulations, growth technique development, and process integration to build devices in Tower fabs, followed by rigorous testing and analysis to drive yield improvements. Ideal candidates hold a PhD in semiconductor optics or equivalent and have hands-on experience with MOCVD/MBE, III-V processing, and photonics