HBM Design Architect

1000 Micron Technology, Inc.; Richardson (TX); On-site; USD 150,000 - 210,000; Full time

Benefits offered by this job

Medical, dental, and vision plans

Paid time off

Benefits guide available

Job summary

Micron Technology, Inc. is seeking an HBM Design Architect in Richardson, TX to lead architecture and de-risking for novel memory and integration technologies.

You will translate device capabilities into product architectures, define product-level requirements, and drive cross-team collaboration to achieve performance, power, and reliability targets. The role demands deep memory technology knowledge, hands-on experience with DRAM/HBM design, and ability to influence roadmap decisions across

Qualifications

• BS in Electrical Engineering, Physics, Materials Science, or related field; 7+ years experience, MS 5+, or PhD 3+ years.
• Solid grounding in mainstream DRAM and/or HBM product architecture and design (array, periphery, datapath, timing, power).
• Deep understanding of DRAM or emerging memory cell and array operation (sensing, retention, disturb, variability).
• Working knowledge of semiconductor process technology and its impact on device and circuit behavior.

Responsibilities

• Lead architecture and feasibility assessments for emerging memories (DRAM, gain cell, stacked/vertical DRAM) and advanced integration (hybrid bonding, fine-pitch TSV).
• Apply mainstream DRAM/HBM product knowledge to define what a new technology must deliver to be product-viable.
• Translate device and process characteristics into product-level requirements for bandwidth, latency, power, thermals, density, and reliability.
• Identify technology–product gaps, define technology targets, and drive de-risking plans including test vehicles, DOEs, and modeling/simulation strategies.
• Partner with process integration, device, packaging, and design teams to define technology-to-product intercept points and decision criteria.
• Lead system-technology co-optimization (STCO) studies spanning array architecture, periphery/CMOS-under-array, interconnect, PDN, and thermal trade-offs.
• Develop roadmap proposals and present recommendations to technical leadership and cross-site working groups (LLM).

Skills

DRAM/HBM architecture

Device and array operation knowledge

Semiconductor process technology

STCO and cross-functional coordination

Education

BS in Electrical Engineering, Physics, Materials Science, or related field

Job description

Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

Micron’s High Bandwidth Memory (HBM) Design Architecture team develops memory solutions for AI accelerators, high-performance computing, and data centers. Our Roadmap and Pathfinding group operates at the intersection of device technology, process, packaging, and product architecture, with a mission to enable next-generation memory technologies for product intercept.

As an HBM Design Architect, you will lead the technical enablement of novel memories and integration technologies — such as DRAM, gain-cell memory, stacked DRAM, and scaled-pitch hybrid bonding — grounded in a deep understanding of mainstream DRAM and HBM products. You will translate technology capabilities into product architectures, identify critical product requirements at risk, and drive de-risking plans with design, process, packaging, and product teams!

Responsibilities

• Lead architecture and feasibility assessments for emerging memories (DRAM, gain cell, stacked/vertical DRAM) and advanced integration (hybrid bonding, fine-pitch TSV)
• Apply mainstream DRAM/HBM product knowledge — array architecture, timing parameters, bandwidth, power, RAS, and JEDEC requirements — to define what a new technology must deliver to be product-viable
• Translate device and process characteristics (retention, variability, cell/array physics, BEOL and bonding constraints) into product-level requirements for bandwidth, latency, power, thermals, density, and reliability
• Identify technology–product gaps, define technology targets, and drive de-risking plans including test vehicles, DOEs, and modeling/simulation strategies
• Partner with process integration, device, packaging, and design teams to define technology-to-product intercept points and decision criteria
• Lead system-technology co-optimization (STCO) studies spanning array architecture, periphery/CMOS-under-array, interconnect, PDN, and thermal trade-offs
• Develop roadmap proposals and present recommendations to technical leadership and cross-site working groups (LLM)

Minimum Qualifications

• BS in Electrical Engineering, Physics, Materials Science, or related field with 7+ years of relevant experience; MS with 5+ years; or PhD with 3+ years
• Solid grounding in mainstream DRAM and/or HBM product architecture and design (array, periphery, datapath, timing, power)
• Deep understanding of DRAM or emerging memory cell and array operation (sensing, retention, disturb, variability)
• Working knowledge of semiconductor process technology and its impact on device and circuit behavior

Preferred Qualifications

• PhD or equivalent experience with 10+ years in DRAM/HBM build, memory technology, or pathfinding
• Direct experience with vertically coordinated DRAM technologies, gain-cell structures (2T0C/IGZO or similar), stacked memory builds, or other emerging memory programs
• Experience with hybrid bonding, TSV-based 3D integration, or advanced packaging technology development

Micron benefits are designed to help you stay well, provide peace of mind and help you prepare for the future.

• We offer a choice of medical, dental and vision plans in all locations enabling team members to select the plans that best meet their family healthcare needs and budget
• Micron also provides benefit programs that help protect your income if you are unable to work due to illness or injury, and paid family leave
• Additionally, Micron benefits include a robust paid time-off program and paid holidays
• For additional information regarding the Benefit programs available, please see the Benefits Guide posted on micron.com/careers/benefits

Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.

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To learn more about Micron, please visit micron.com/careers

Micron Prohibits the use of child labor and complies with all applicable laws, rules, regulations, and other international and industry labor standards.

Micron does not charge candidates any recruitment fees or unlawfully collect any other payment from candidates as consideration for their employment with Micron.

AI alert: Candidates are encouraged to use AI tools to enhance their resume and/or application materials. However, all information provided must be accurate and reflect the candidate's true skills and experiences. Misuse of AI to fabricate or misrepresent qualifications will result in immediate disqualification.