GaN Process Integration Engineer

Texas Instruments; Dallas (TX); On-site; USD 80,000 - 120,000; Full time

Job summary

An established industry player is seeking a Process Integration Engineer to drive advancements in gallium nitride (GaN) power devices. This exciting role involves close collaboration with various teams to develop and optimize cutting-edge semiconductor technologies. Candidates should possess a strong background in III-nitride materials and device physics, along with hands-on lab experience. Join a forward-thinking company committed to innovation and shaping the future of technology, where your expertise will contribute to impactful projects and enhance device reliability.

Qualifications

• In-depth knowledge of III-nitride materials and device physics.
• Experience in development of GaN devices for normally-off operation.

Responsibilities

• Develop and characterize GaN power devices for optimization.
• Collaborate with manufacturing engineers for device manufacturability.

Skills

GaN device simulations (TCAD)

Device design and layout

High voltage power FETs

Electrical and materials characterization

Statistical data analysis

Problem solving

Education

Bachelor's degree in Electrical Engineering

Master's degree in a related field

Tools

TCAD

Job description

About TI
Texas Instruments Incorporated (TI) is a global semiconductor design and manufacturing company that develops analog ICs and embedded processors. By employing the world's brightest minds, TI creates innovations that shape the future of technology. TI is helping about 100,000 customers transform the future, today. We're committed to building a better future - from the responsible manufacturing of our semiconductors, to caring for our employees, to giving back inside our communities and developing great minds. Put your talent to work with us!

About the job

This process integration engineer position is focused on development, characterization and optimization of gallium nitride (GaN) power devices. As part of TI's advanced technology development (ATD) team, the role involves close collaboration with fab/manufacturing, business units and Kilby Labs. This position requires in-depth knowledge of III-nitride materials, device physics, and reliability. Experience in development of GaN devices for normally-off operation is desired. The scope of the job includes, but not limited to:

• GaN device simulations (TCAD), device design, layout
• Fabrication flow development and characterization of GaN devices
• Collaboration with fab/manufacturing engineers to ensure device manufacturability
• Collaboration with reliability engineers to meet device reliability requirements
• Failure root-cause investigation for device/process/reliability/yield improvements

The ideal candidate is expected to have a strong understanding of the following:

• High voltage power FETs and other relevant semiconductor device physics
• Typical analog silicon and GaN high electron mobility transistor (HEMT) process flows and the underlying process physics
• Electrical and materials characterization methodologies and statistical data analysis

Strong hands-on lab experience and excellent problem solving skills are also needed. Excellent verbal and written communication skills are a must as the position requires interfacing with multiple teams.