Foundry Interface Design Architect for Next-Gen HBM

Micron Technology

Folsom (CA)

On-site

USD 150,000 - 308,000

Full time

11 days ago

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Job summary

Micron Technology is seeking a senior engineer for the HBM Design Architecture team within the HBM DRAM Engineering Group. You will bridge internal design teams, foundries, and technology development to deliver high‑performance HBM products powering AI workloads.

The role is full‑time onsite in California, focusing on technology development, circuit simulation, test‑chips, and design enablement to advance memory solutions and reliability across DTCO and BEOL domains.

Qualifications

BS, MS, or PhD or equivalent experience in Electrical Engineering, Computer Engineering, or related field.
6+ years of semiconductor industry experience and solid understanding of advanced semiconductor technology development.
Strong grasp of advanced CMOS technology nodes, FinFET devices, and process integration.
Hands-on experience with: HSPICE simulations, Device characterization, Standard cell benchmarking, PPA analysis, Parasitic extraction and physical verification
Experience in driving AI-enabled engineering practices and automation to improve the efficiency of DTCO analysis, foundry collateral evaluation, PDK enablement, benchmarking, and collaboration across build teams.

Responsibilities

Act as the primary technical interface between foundry partners and Micron design organizations.
Drive closure of design-process gaps through collaborative engagement with foundry process teams.
Influence foundry roadmaps related to TSV, BEOL, reliability, and design enablement.
Define technology requirements for future HBM and custom memory products.
Perform HSPICE simulations and circuit analysis to support technology evaluation.