EUV Lithography Process Development Engineer- TPG

Micron Technology, Inc; Boise (ID); On-site; USD 90,000 - 120,000; Full time

Job summary

Micron Technology, Inc in Boise, Idaho, is seeking an EUV Lithography Process Development Engineer to lead new patterning technology initiatives. The role involves developing EUV modules, setting up lithography processes, and collaborating across teams to ensure alignment with manufacturing requirements.

Ideal candidates hold a M.S. or Ph.D. in Engineering, Chemistry, or Physics and possess a strong understanding of EUV lithography along with requisite semiconductor industry experience. Micron is an equal opportunity employer.

Qualifications

• 3+ years of semiconductor industry experience related to Photolithography.
• Hands-on industry experience with High NA EUV in a pathfinding setting.
• Proven experience in designing experiments and data analysis.

Responsibilities

• Lead and participate in pathfinding activities for new patterning technology.
• Develop EUV modules and set up lithography processes.
• Travel to support early learning for high NA EUV.

Skills

Understanding of EUV lithography

Knowledge of 193nm immersion multiple patterning processes

Experience with photolithography simulation software

Strong statistical analysis skills

Strong written and verbal communication skills

Education

M.S. or Ph.D. in Engineering, Chemistry, Physics

B.S. in Engineering, Chemistry, Physics with 10+ years experience

Tools

Prolith

S-Litho

JMP

Python

Job description

Req ID: JR89828 EUV Lithography Process Development Engineer - TPG

Summary

• Lead and participate in pathfinding activities for new patterning technology. This will include all lithography nodes, including 193nm immersion, EUV, and high NA EUV.
• Develop EUV modules in our technology development (TD) site. This includes setting up lithography processes and working with other process areas and process integration to meet manufacturing requirements.
• Travel up to once a month to New York or other locations to support early learning for high NA EUV.
• Work closely with defect inspection teams and our mask shop to develop appropriate inspection strategies for EUV masks.
• Collaborate with manufacturing sites to align on equipment and materials requirements, and to make sure EUV processes are aligned for transfer.

Minimum Requirements

• Understanding of EUV lithography, including differences between EUV lithography and deep ultraviolet (DUV) lithography.
• Knowledge and an understanding of 193nm immersion multiple patterning processes, including litho‑etch‑litho‑etch (LELE) and self‑aligned quadruple patterning (SAQP).
• Knowledge of optics for photolithography or experience with photolithography simulation software such as Prolith or S‑Litho is helpful.
• Required Education: Degree/Major: M.S. or Ph.D. in Engineering, Chemistry, Physics, or a study relevant to Photolithography with at least 3 years of semiconductor industry experience; or a B.S. in Engineering, Chemistry, or Physics with 10+ years of semiconductor industry process‑related experience with emphasis on Photolithography.

Preferred Requirements

• Hands on industry experience with High NA EUV in a pathfinding setting.
• Coursework or proven experience showing strong statistical analysis skills, including design of experiments and data analysis. Experience with JMP, Python, or other statistical analysis software is helpful.
• Strong written and verbal communication skills. Ability to write and present clear and concise executive summaries for Micron and supplier management teams.

Job Profile(s)

• Semiconductor Process Engineer 5 - Semiconductor Process Eng MTS

Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.