DRAM Device & Cell Technology Engineer

Micron; Boise (ID); On-site; USD 110,000 - 160,000; Full time

Benefits offered by this job

Medical plan

Dental plan

Vision plan

Paid time off

Paid holidays

Job summary

Micron Technology enables memory and storage innovations, driving the future of information technology. The DRAM Device & Cell Technology Engineer will define and optimize next‑generation DRAM architectures, lead experiments, and partner with cross‑functional teams to improve performance, reliability and scalability.

This role offers exposure to leading‑edge memory technology and opportunities to influence product roadmaps in a collaborative environment.

Qualifications

• MS/PhD in Electrical Engineering, Materials Science, Applied Physics, or related field.
• Understanding of semiconductor device physics, including MOSFETs, access devices, and capacitors.
• Experience with electrical measurement, device characterization, and data analysis.
• Knowledge of DRAM fundamentals, including activation, sensing, retention, and interference mechanisms.
• Proficiency with data analysis and scripting applications including Python, MATLAB, or JMP.

Responsibilities

• Develop DRAM cell and access device technologies to improve density, retention, and disturb immunity.
• Design and execute silicon experiments; perform electrical characterization, data analysis, and interpretation.
• Analyze array‑level behavior and collaborate with circuit teams to optimize operating conditions and sequences.
• Coordinate efforts among multiple departments to ensure developed solutions are scalable and manufacturable.
• Contribute to technology roadmaps through benchmarking, technical evaluation, and strategic recommendations.

Skills

Python

MATLAB

Data analysis

Semiconductor physics

Education

M.S. or Ph.D. in Electrical Engineering

Job description

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

Our DRAM and Cell Technology team is focused on advancing memory innovation through the development of next-generation DRAM cell and device technologies. We work across disciplines to solve complex technical challenges, improve product performance, and enable future memory scaling. Join a collaborative team that is shaping the future of information technology through breakthrough memory solutions.

As a DRAM Device & Cell Technology Engineer, you will play a key role in defining and optimizing next-generation DRAM architectures and technologies. You will contribute to device and cell development, lead experimental investigations, and partner with cross‑functional teams to improve performance, reliability, and scalability. This is an opportunity to work on leading‑edge memory technology and influence future product roadmaps.

Responsibilities

• Develop DRAM cell and access device technologies to improve density, retention, and disturb immunity
• Design and execute silicon experiments; perform electrical characterization, data analysis, and interpretation
• Analyze array‑level behavior and collaborate with circuit teams to optimize operating conditions and sequences
• Coordinate efforts among multiple departments to ensure developed solutions are scalable and manufacturable
• Contribute to technology roadmaps through benchmarking, technical evaluation, and strategic recommendations

Minimum Qualifications

• M.S. or Ph.D. in Electrical Engineering, Materials Science, Applied Physics, or a related field
• Understanding of semiconductor device physics, including MOSFETs, access devices, and capacitors
• Experience with electrical measurement, device characterization, and data analysis
• Knowledge of DRAM fundamentals, including activation, sensing, retention, and interference mechanisms
• Proficiency with data analysis and scripting applications including Python, MATLAB, or JMP

Preferred Qualifications

• Experience with DRAM or NAND device development
• Experience using TCAD simulation tools such as Synopsys Sentaurus or Silvaco
• Experience in semiconductor device fabrication or advanced BEOL integration
• Knowledge of device reliability mechanisms and variation analysis, including AI‑enabled data analysis techniques
• Strong communication skills with the ability to present technical results and drive cross‑functional alignment

Benefits

Micron benefits are designed to help you stay well, provide peace of mind and help you prepare for the future. We offer a choice of medical, dental and vision plans in all locations enabling team members to select the plans that best meet their family healthcare needs and budget.

Micron also provides benefit programs that help protect your income if you are unable to work due to illness or injury, and paid family leave.

Additionally, Micron benefits include a robust paid time‑off program and paid holidays. For additional information regarding the Benefit programs available, please see the Benefits Guide posted on micron.com/careers/benefits .

Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.

Micron Prohibits the use of child labor and complies with all applicable laws, rules, regulations, and other international and industry labor standards.

Micron does not charge candidates any recruitment fees or unlawfully collect any other payment from candidates as consideration for their employment with Micron.

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To learn more about Micron, please visit micron.com/careers