Intern - NAND Cell Reliability

Micron Technology, Inc

Singapore

On-site

SGD 11,160 - 27,900

Full time

14 days+

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Job summary

Micron Technology, Inc in Singapore is offering an internship focused on reliability data analysis and efficiency improvements in semiconductor technology. Interns will work closely with experienced mentors on a technical project involving data analysis, project planning, and delivering comprehensive documentation.

The ideal candidate will be pursuing a PhD in relevant fields and possess strong analytical skills. This role offers valuable experience in NAND memory reliability and collaboration within engineering teams.

Qualifications

  • Currently pursuing a PhD in a relevant field.
  • Basic understanding of semiconductor device physics and materials characterization.
  • Strong analytical and problem-solving skills.

Responsibilities

  • Analyze reliability datasets to understand sources of variation.
  • Help track and interpret reliability indicators and error behaviors.
  • Develop or enhance scripts to improve repeatability.

Skills

Analytical skills
Problem-solving skills
Collaboration
Communication skills

Education

PhD in Electrical/Electronics/Materials Engineering, Applied Physics, or related discipline

Job description

As an intern, you will work with an experienced mentor and project stakeholders to deliver a focused technical project. Depending on your background and business needs, your project may include work in one or more of the following areas:

Project Scope
  • Reliability data analysis & variation learning: analyze reliability datasets to understand sources of variation (e.g., die/block/wordline effects), and communicate insights with clear visuals and summaries.
  • Qualification learning support (intrinsic cell reliability): help track and interpret reliability indicators and error behaviors relevant to NAND reliability learning and qualification readiness.
  • Automation / efficiency improvement: develop or enhance scripts to improve repeatability, reduce manual effort, and speed up analysis/learning cycles (Python preferred).
Expected Deliverables
  • A well‑scoped project plan (problem statement, approach, timeline, risks)
  • A final technical readout (slides + short write‑up) summarizing method, results, and recommendations
  • Reproducible analysis artifacts (scripts/notebooks) and clear documentation for handoff
What You Will Learn
  • How NAND memory reliability is evaluated, including key concepts like bit errors, error behavior, and reliability mechanisms under use conditions.
  • How engineering teams use data to accelerate technology learning (including initiatives related to test time reduction, die‑level predictors, and efficiency improvements).
  • How cross‑functional teams collaborate across TD, characterization, and (where applicable) system/validation partners.
Skillset Required
  • Currently pursuing a PhD in Electrical/Electronics/Materials Engineering, Applied Physics, or a related discipline.
  • Basic understanding of semiconductor device physics and materials characterization.
  • Strong analytical and problem‑solving skills; demonstrated innovation is highly valued.
  • Effective communication skills and a collaborative mindset.

All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status.

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