Scientist / Senior Scientist (Silicon Carbide TCAD Device Design), SiC, IME

Agency for Science, Technology and Research (A*STAR); Singapore; On-site; SGD 80,000 - 120,000; Full time

Job summary

A leading research agency is seeking a skilled individual to lead TCAD modeling and simulation of high power electronics devices. The role involves developing high power SiC MOSFETs and collaborating closely with stakeholders to address their needs. Ideal candidates will possess a PhD in Electrical Engineering and have significant industrial experience in device design and modeling.

Qualifications

• More than 2-3 years of industrial experience in high power device design and modeling.

Responsibilities

• TCAD modeling, simulation, and innovative design of high power electronics devices.
• Develop and simulate high power SiC MOSFETs using industry-standard simulators.
• Foster collaborations with internal and external customers.

Skills

Communication

Education

PhD Degree in Electrical Engineering

Job description

Roles and Responsibilities:

• TCAD modeling, simulation, and innovative design of high power electronics devices, as well as device characterization.
• Develop and simulate high power SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT) with a blocking voltage exceeding 1.2K using industry-standard Synopsys/Silvaco simulators.
• Create and simulate practical & efficient junction terminations.
• Model transport and carrier scattering in devices operating under extreme ambient conditions.
• Serve as a valuable resource for colleagues with less TCAD power electronics experience and lead group projects by managing risks & resource requirements.
• Foster close collaborations with both internal and external customers to fully understand their issues and requirements.

Job Requirements:

• PhD Degree in Electrical Engineering or related field.
• More than 2-3 years of industrial experience in high power device design and modeling.
• Thorough understanding of different types of high-voltage, high-power MOSFETs including Planar, Trench, Super-Junction MOSFETs, and IGBTs, focusing on design and device characterization.
• Hands-on skills in designing MOSFET/diode layouts.
• Excellent communication skills to effectively engage with customers, address their needs, resolve issues, and meet demands.