This master thesis focuses on the characterization of defects in a Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor. The work involves setting up an optical experiment to measure fluorescence from SiC-chips after laser excitation at cryogenic temperatures in a closed cycle He-cryostat. Responsibilities include:
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This position is subject to the Collective Agreement for employees in non-university research (Research CA). The monthly gross salary is EUR 1,863, paid 14 times a year.
Title: Master Thesis – Low temperature spectroscopy of SiC defects (all genders) // Job-ID: 157-0
Status: This job posting is active and accepting applications.