Engineering Director, MicroE, IME

Agency for Science, Technology and Research; Queenstown; On-site; NZD 125,000 - 150,000; Full time

Job summary

An innovative research organization is seeking a highly skilled professional with a PhD in Material Science or related fields. This role involves diagnosing metal contamination, optimizing PVD processes, and collaborating with cross-departmental teams to enhance device performance. The successful candidate will lead data analysis on implant-induced defects and design experiments for Ohmic contacts on SiC substrates. Join a dynamic team focused on cutting-edge semiconductor technology and contribute to the development of high-performance applications. This is a unique opportunity to leverage your expertise in a collaborative environment and drive impactful solutions.

Qualifications

• PhD with 8+ years of industrial experience in backend process module integration.
• Extensive hands-on experience in PVD processing for metal depositions.

Responsibilities

• Diagnosing metal contamination levels and establishing characterization protocols.
• Collaborating with vendors to optimize metal-stack for device performance.

Skills

PVD Processing

Metal-Semiconductor Contact Physics

Work-Function Tuning

Electron Affinity Modulation

Mentoring Skills

Excellent Communication

Education

PhD in Material Science

PhD in Physics

PhD in Electrical Engineering

Job description

Role & Responsibilities:

• Responsibilities include diagnosing appropriate levels of metal/metal-alloy contaminations by oxygen and other contaminants; determining the root cause of contaminants, and establishing protocols for characterizations.

• Hands-on providing support for onsite metal PVD, including creating, running, and characterizing recipes to achieve the lowest resistances.

• Collaborates closely with equipment vendors and device engineers to optimize the metal-stack for device performances and robustness/reliability, from low to high temperatures.

• Lead data analysis related to implant-induced defects and cleaning issues on metal contacts with solutions development.

• Examines the work-functions of metal/metal-alloys suitable for Ohmic contact on SiC.

• Responsible for designing experiments for Ohmic contact on various SiC substrates with different doping types, determining their impact, and resolving issues to achieve the lowest specific contact resistances.

• Designing cleaning processes to obtain ideal Schottky diode using various metal/metal-alloys on SiC for high-performance applications.

• Work closely with cross-departmental and integration teams and in 3-5 years develop a WBG backend process integration team of at least 4 persons.

Requirements:

• PhD Degree in Material Science, Physics, Electrical Engineering or related field.

• >8 years related industrial experience including backend process module integration.

• Extensive hands-on experience in PVD (Physical Vapor Deposition) processing for metal depositions and interface tuning.

• Strong understanding of metal-semiconductor contact physics.

• Expertise in work-function tunings of metal and metal-alloy.

• Proficiency in modulating electron affinity through implantation or surface treatments of semiconductors.

• Familiarity with wide band-gap semiconductor materials and their interaction with metal/metal-alloys at various temperatures.

• Thorough fundamentals in Ohmic contact and Schottky diode physics, as well as the impact of defects and contaminations on electrical properties.

• Skilled at mentoring and transferring knowledge to junior staff members.

• Excellent communication skills to effectively address customers' needs, concerns, and solution requirements.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.