Staff Technology Development Engineer (NAND, Memory, Semiconductor Device physics, Process, and[...]

Sandisk; Bengaluru; On-site; INR 3,000,000 - 4,500,000; Full time

Job summary

Sandisk is seeking a Staff Technology Development Engineer with 8 to 12 years of experience in NAND memory, device physics, process and reliability. You will develop memory trim and push performance while collaborating with SSD and iNAND teams to design features that enhance system reliability.

The role requires strong knowledge in device physics, circuit design, and scripting in C/C++, Perl or Python. You will work across process, reliability and manufacturing to support qualification and

Qualifications

• MS/MTech in Electrical Engineering, Applied Physics, or related field with 6–8 years experience, or PhD with 3–4 years experience.
• In-depth knowledge of semiconductor device physics, process, and reliability, as well as circuit design.
• Proficiency in C/C++ and scripting with Perl/Python.
• Excellent verbal and written communication skills.
• Ability to analyze problems and work independently.

Responsibilities

• Develop NAND memory trim and push performance and reliability envelope for flash memory.
• Collaborate with memory system teams to design and develop device features improving system performance and reliability.
• Bridge between storage business units, technology development, and manufacturing to support qualification and ramp-up.

Skills

C/C++ programming

Perl scripting

Python scripting

Communication skills

Analytical thinking

Education

MS/MTech in Electrical Engineering or Applied Physics

PhD with 3–4 years of experience

Job description

Staff Technology Development Engineer (NAND, Memory, Semiconductor Device physics, Process, and Reliability) with 8 to 12 years of experience

• Full-time
• Job Type (exemption status): Exempt position - Please see related compensation & benefits details below
• Business Function: Technology Development Engineering

In this role, you will develop NAND memory trim and push the performance and reliability envelope of flash memory used in best‑in‑class high‑density storage applications. You will collaborate with memory system teams, including consumer and enterprise SSD and iNAND, to design and develop device features that improve system‑level performance and reliability. You will work with process, design, reliability, and system groups to support product device qualification and ramp up volume production, serving as a bridge between storage business units, technology development, and manufacturing.

Qualifications

• MS/MTech degree in Electrical Engineering, Applied Physics, or a related field with 6–8 years of experience, or a PhD with 3–4 years of experience.
• In‑depth knowledge of semiconductor device physics, process, and reliability, as well as circuit design. Knowledge of NAND flash memory device and physics is a plus.
• Proficiency in C/C++ and proficiency in scripting with Perl/Python.
• Excellent verbal and written communication skills.
• Ability to analyze problems and work independently.

We are committed to a diverse, inclusive environment and to accommodating applicants with disabilities. For accommodations, contact [e-mail] with the job title and requisition number.